Semiconductor image sensor module and method of manufacturing the same

ABSTRACT

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

CROSS REFERENCES TO RELATED APPLICATIONS

This is a Continuation Application of U.S. patent application Ser. No.11/915,958, filed on Nov. 29, 2007, which is a 371 of InternationalApplication Number PCT/JP2006/311007, filed on Jun. 1, 2006, whichclaims priority from Japanese Patent Application JP2005-163267, filedJun. 2, 2005 and Japanese Patent Application JP2005-197730, filed Jul.6, 2005, the entire contents of which being incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to a semiconductor image sensor module anda method of manufacturing the same. In more detail, it relates to asemiconductor image sensor module which realizes simultaneous shutteringmeeting speeding up of the shutter speed of, for example, a digitalstill camera, a video camera, a mobile phone with a camera or the like.

BACKGROUND ART

Since a CMOS image sensor operates with a single power supply in lowpower consumption as compared with a CCD image sensor and can bemanufactured by a standard CMOS process, there is an advantage that asystem on chip is easy. In recent years, a CMOS image sensor has startedto be used based on this advantage even in a high-grade single lensreflex type digital still camera and a mobile phone.

In FIG. 54 and FIG. 55, simplified constitutions of a CCD image sensorand a CMOS image sensor are shown respectively.

A CCD image sensor 1 shown in FIG. 54 is formed in a constitution that aplurality of light receiving sensors (photoelectric conversion elements)3 which become pixels are arranged regularly in an imaging region 2, forexample, in a two dimensional matrix form and at the same time, verticaltransfer registers 4 of a CCD structure which transfer signal charges inthe vertical direction are arranged corresponding to respective lightreceiving sensor columns, further, a horizontal transfer register 5 of aCCD structure which is connected with respective vertical transferregisters 4 and which transfers signal charges in the horizontaldirection is arranged, and an output unit 6 converting charge voltagesto voltage signals and outputting the voltage signals is connected atthe final stage of this horizontal transfer register 5. In this CCDimage sensor 1, light received by the imaging region 2 is converted tosignal charges in respective light receiving sensors 3 and isaccumulated, and the signal charges of these respective light receivingsensors 3 are read out to the vertical transfer registers 4 through areadout gate portion 7 and are transferred in the vertical direction.Also, signal charges read out from the vertical transfer registers 4 tothe horizontal transfer register 5 on a line-to-line basis aretransferred in the horizontal direction, converted to voltage signals bythe output unit 6, and outputted as image signals.

On the other hand, a CMOS image sensor 11 shown in FIG. 55 isconstituted by being provided with an imaging region 13 in which aplurality of pixels 12 are arranged, a control circuit 14, a verticaldrive circuit 15, a column unit 16, a horizontal drive circuit 17, andan output circuit 18. In the imaging region 13, a plurality of pixels 12are regularly arranged two dimensionally, for example, in a twodimensional matrix form. Each pixel 12 is formed by a photoelectricconversion element (for example, photodiode) and a plurality of MOStransistors. The control circuit 14 receives an input clock, and datafor instructing an operation mode or the like, and also outputs dataincluding information of the image sensor.

In this CMOS image sensor 11, a line of pixels 12 is selected by a drivepulse from the vertical drive circuit 15, and outputs of the pixels 12of the selected line are transmitted to the column unit 16 throughvertical selection lines 21. In the column unit 16, column signalprocessing circuits 19 are arranged corresponding to the columns ofpixels and receive signals of the pixels 12 for one line, and processessuch as CDS (Correlated Double Sampling: process for eliminating fixedpattern noise), signal amplification, analog/digital (AD) conversion orthe like are applied to the signals. Then, the column signal processingcircuits 19 are sequentially selected by the horizontal drive circuit17, and signals thereof are introduced to a horizontal signal line 20and are outputted from the output circuit 18 as image signals.

There are shown, in FIGS. 56A and 56B, accumulation timing charts ofpixel lines corresponding to respective scanning lines of the CCD imagesensor 1 and the CMOS image sensor 11. In the case of the CCD imagesensor 1, signal charges are accumulated in respective light receivingsensors 3 during the same period, and the signal charges are read outfrom the light receiving sensors 3 to the vertical transfer register 4for all the pixels simultaneously. More specifically, as shown in FIG.56A, signal charges of the pixels of all the lines are accumulated atthe same time instant during an accumulation period of a certain frame.Thereby, simultaneity of accumulation is obtained, and simultaneouselectronic shuttering is made possible.

On the other hand, in the case of the CMOS image sensor 11, due to itsfundamental operation method, the pixel 12 which has outputted a signalstarts accumulation of a photoelectrically converted signal again fromthat time point, so that as shown in FIG. 56B, accumulation periods areshifted in accordance with scanning timings in a certain frame period.Owing to this fact, simultaneity of accumulation is not obtained, andsimultaneous electronic shuttering cannot be obtained. Morespecifically, in the CMOS image sensor 11, because a vertical transferregister which delays the transfer timing as in the case of the CCDimage sensor is not provided, timing for transmitting data to the columnsignal processing circuit is adjusted by adjusting the pixelaccumulation period in accordance with the reset timing. For thisreason, it is necessary to shift accumulation periods of signal charges,and a simultaneous shutter configuration to perform charge accumulationof all the pixels at the same timing cannot be realized (see page 179 ofNon-patent Document 1).

In particular, this difference comes out when imaging a moving pictureat a high speed. FIGS. 57A and 57B show recorded pictures when a fanrotating at a high speed is recorded with a CCD image sensor and a CMOSimage sensor. As can be appreciated from the same drawings, a fan 25recorded by the CCD image sensor is recorded normally, but the fan 25recorded by the CMOS image sensor is recorded distorted in its shape(see page 180 of Non-patent Document 1).

[Non-patent Document 1] [Basic and Application of CCD/CMOS Image Sensor]by Kazuya Yonemoto, published from CQ Publishing Kabushiki-kaisha onAug. 10, 2003, pages 179 to 180

As a countermeasure for imaging a picture moving at a high speed in theabove-mentioned CMOS image sensor, there has been proposed aconstitution shown in FIG. 52 and FIG. 53. This CMOS image sensor 31 isa one applied to a front-illuminated type CMOS image sensor, and asshown in a plane block layout of FIG. 52, it is constituted by formingin a necessary region of one semiconductor chip, an imaging region, aso-called photodiode PD/sensor circuit region 32, in which pixels, eachof which is composed of a photodiode as a photoelectric conversionelement and a plurality of MOS transistors, are arranged, and anADC/memory region 33 in which a plurality of analog/digital (AD)conversion circuits connected with respective pixels and memory meansare arranged, adjacent to this photodiode PD-sensor circuit region 32.

There is shown in FIG. 53 a cross section structure of a unit pixel ofthe CMOS image sensor 31. In this example, it is constituted as afront-illuminated type by forming a p-type semiconductor well region 36in an n-type semiconductor substrate 35; a unit pixel 38 composed of aphotodiode PD and a plurality of MOS transistors Tr in a p-typesemiconductor well region 36 of each region which is partitioned by apixel separation region 37; a multilayer wiring layer 39 in whichmultilayers, for example, a first layer wiring 441, a second layerwiring 442, and a third layer wiring 443 are formed, on the substratefront face side, through an interlayer insulation film 43; and further acolor filter 41 and an on-chip microlens 42 on the multiplayer wiringlayer 39. The photodiode PD is constituted by a buried type photodiodehaving an n-type semiconductor region 46, and a p+ semiconductor region47 that becomes an accumulation layer on the front face. Although notshown, it is possible to make the MOS transistors Tr constituting apixel, for example, as a 3 transistor structure including a readouttransistor, a reset transistor, and an amplifier transistor, or a 4transistor structure in which a vertical selection transistor is furtheradded.

In this CMOS image sensor 31, it is constituted such that afterphotoelectric conversion is carried out by the photodiode,analog/digital conversion is carried out at once and simultaneously, andthe signal is held in the memory means as data, and thereafter, the datais read out from the memory means sequentially. In this constitution,because the signal which has been analog-to-digital converted is onceheld in the memory means and thereafter signal processing is carriedout, simultaneous shuttering is made possible.

However, in the CMOS image sensor having the constitution of FIG. 52,the photodiode PD-sensor circuit region 32 and the ADC-memory region 33are included in a single semiconductor chip, so that when the number ofpixels is increased to achieve high resolution, the opening area of aunit pixel, that is, a minute pixel, becomes small, and high sensitivitycannot not be obtained. Then, chip use efficiency is inferior and thearea of a chip is increased, so that cost increase cannot be avoided.

DISCLOSURE OF THE INVENTION

The present invention is to provide a CMOS type semiconductor imagesensor module in which the aperture ratio of a pixel is improved and atthe same time, improvement of chip use efficiency is attempted andfurthermore, simultaneous shuttering of all the pixels is made possible,and a method of manufacturing the same.

A semiconductor image sensor module according to the present inventionis characterized by being formed by laminating a first semiconductorchip including an image sensor in which a plurality of pixels arearranged regularly and each of the pixels is constituted by aphotoelectric conversion element and transistors and a secondsemiconductor chip including an analog/digital converter array composedof a plurality of analog/digital converters.

A preferable mode of the present invention has a constitution in theaforesaid semiconductor image sensor module that a third semiconductorchip including a memory element array provided with at least a decoderand a sense amplifier is further laminated.

A preferable mode of the present invention has a constitution that thefirst and second semiconductor chips are arranged close to the thirdsemiconductor chip such that a plurality of photoelectric conversionelements and a plurality of memory elements share one analog/digitalconverter.

It is possible to constitute the memory element by a volatile memory, afloating gate type nonvolatile memory, an MONOS type nonvolatile memory,a multivalued nonvolatile memory or the like.

It is possible to configure the memory element array to have a memorybit for parity check. It is possible to configure the memory elementarray to have a constitution that a spare bit for relieving a defect isincluded.

A semiconductor image sensor module according to the present inventionis characterized by being formed by laminating a first semiconductorchip including an image sensor in which a plurality of pixels arearranged regularly and each of the pixels is constituted by aphotoelectric conversion element and transistors, and a fourthsemiconductor chip including an analog type nonvolatile memory arraycomposed of a plurality of analog type nonvolatile memories, and in thatan amount of information corresponding to an amount of accumulatedelectric charge is stored by the analog type nonvolatile memory.

A manufacturing method of a semiconductor image sensor module accordingto the present invention is characterized by including the steps of:forming a first semiconductor chip provided with an image sensor inwhich a plurality of pixels, each of which is constituted by aphotoelectric conversion element and transistors, are regularly arrangedtwo-dimensionally; forming a second semiconductor chip provided with ananalog/digital converter array which is composed of a plurality ofanalog/digital converters; and laminating the first semiconductor chipand the second semiconductor chip and connecting the pixels of aforesaidimage sensor and the analog/digital converters. In this connectionprocess, the pixels of the image sensor of the first semiconductor chipand the analog/digital converters of the second semiconductor chip arebonded by means of bumps with the analogue/digital converters faceddownward or connected by means of through-holes which pass through awafer vertically with respect to an LSI chip surface.

A preferable mode of a manufacturing method of a semiconductor imagesensor module according to the present invention includes in theaforementioned manufacturing method of a semiconductor image sensormodule, a process for forming a third semiconductor chip provided with amemory element array which includes at least a decoder and a senseamplifier; and a process for laminating the first semiconductor chip,the second semiconductor chip, and the third semiconductor chip andconnecting the pixels of the image sensor with the memory through theanalog/digital converters. In this connection process, the pixels of theimage sensor of the first semiconductor chip are connected with thememory of the third semiconductor chip through the analog/digitalconverters of the second semiconductor chip by means of through-holespassing through the wafer vertically with respect to the wafer face.

A manufacturing method of a semiconductor image sensor module accordingto the present invention is characterized by including: a process forforming a first semiconductor chip provided with an image sensor inwhich a plurality of pixels, each of which is constituted by aphotoelectric conversion element and transistors, are regularly arrangedtwo-dimensionally; a process for forming a fourth semiconductor chipprovided with an analog nonvolatile memory array composed of a pluralityof analog type nonvolatile memories; and a process for laminating thefirst semiconductor chip and the fourth semiconductor chip andconnecting the pixels of the image sensor and the analog typenonvolatile memories.

According to a semiconductor image sensor module of the presentinvention, a first semiconductor chip provided with an image sensor inwhich a pixel is constituted by a photoelectric conversion element andtransistors and a second semiconductor chip provided with ananalog/digital converter array which is composed of a plurality ofanalog/digital converters are laminated to constitute the semiconductorimage sensor module, so that in the first semiconductor chip, a largeportion thereof can be formed as a pixel region and therefore, theaperture ratio of the photoelectric conversion element is improved andalso, it is possible to improve chip utilization. Also, by providing asemiconductor chip which includes a memory element array composed of aplurality of memory elements, the pixel signals from the firstsemiconductor chip can be signal-processed after carrying outanalog/digital conversion in the second semiconductor chip in a shortperiod and once storing the signals in the memory element array, so thatit is possible to realize simultaneous shuttering of the pixels.

By configuring a first semiconductor chip provided with an image sensorin which the pixel is constituted by a photoelectric conversion elementand transistors, a second semiconductor chip provided with ananalog/digital converter array which is composed of a plurality ofanalog/digital converters, and further a third semiconductor chipprovided with a memory element array which includes at least a decoderand a sense amplifier, in a laminated structure, one unified device isobtained, and it is possible to realize improvement of the apertureratio of the photoelectric conversion element, improvement of chiputilization, and further simultaneous shuttering of all the pixels.

By employing a constitution that the first and third semiconductor chipsare arranged close to the second semiconductor chip such that aplurality of photoelectric conversion elements and a plurality of memoryelements share one analog/digital converter, the signals from theplurality of photoelectric conversion elements can be analog-to-digitalconverted serially in the analog/digital converter and can be held inthe memory elements in a short period, and it is possible to executesimultaneous shuttering of all the pixels.

According to a semiconductor image sensor module of the presentinvention, by employing a constitution that a first semiconductor chipprovided with an image sensor in which a pixel is constituted by aphotoelectric conversion element and transistors and a fourthsemiconductor chip provided with an analog type nonvolatile memory arrayare laminated, in the first semiconductor chip, a large portion thereofcan be formed as a pixel region, so that the aperture ratio of thephotoelectric conversion element is improved and also, it is possible toimprove chip utilization. In addition, because the pixel signals fromthe first semiconductor chip are signal-processed after having been heldonce in the analog type nonvolatile memory cell, it is possible torealize simultaneous shuttering of the pixels.

According to a manufacturing method of a semiconductor image sensormodule of the present invention, it is possible to manufacture asemiconductor image sensor module provided with a CMOS image sensor inwhich it is possible to realize improvement of the aperture ratio of thephotoelectric conversion element, improvement of chip utilization, andfurther simultaneous shuttering of all the pixels.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an outlined constitution diagram showing a first exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention.

FIG. 2 is a cross-section diagram of a main portion of aback-illuminated type CMOS image sensor applied to the presentinvention.

FIG. 3 is a schematic perspective view of a main portion of theexemplified embodiment in FIG. 1.

FIG. 4 is a block constitution diagram used for explanation of datatransfer of the first exemplified embodiment.

FIG. 5 is a whole block diagram of the first exemplified embodiment.

FIG. 6 is an outlined constitution diagram showing a second exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention.

FIG. 7 is an outlined cross-section diagram of a multivalued nonvolatilememory (resistance-changing type multivalued memory) according to thesecond exemplified embodiment.

FIG. 8 is a circuit diagram of a multivalued memory.

FIG. 9 is an explanatory diagram of pulse application in the case of abinary resistance-changing type memory.

FIG. 10 is a voltage-current characteristic diagram in the case of abinary resistance-changing type memory.

FIG. 11 is a connection wiring diagram of a memory array.

FIG. 12 is an operation explanatory diagram of “0” writing.

FIG. 13 is an operation explanatory diagram of “1” writing.

FIG. 14 is an operation explanatory diagram of readout.

FIG. 15 is a current-voltage characteristic diagram of a multivaluedmemory.

FIG. 16 is a program diagram for explanation of a multivalued memory.

FIG. 17 is an explanatory diagram of a plurality of pulse programs of amultivalued memory in an ideal case.

FIG. 18 is an outlined constitution diagram of a floating gate typenonvolatile memory.

FIG. 19 is an explanatory diagram for explaining a cell array connectionwiring, a writing operation and an erasing operation of a representativefloating gate type nonvolatile memory.

FIG. 20 is an outlined constitution diagram of an MONOS type nonvolatilememory.

FIG. 21 is an explanatory diagram for explaining a cell array connectionwiring, a writing operation and an erasing operation of an MONOS typememory.

FIG. 22 is an outlined constitution diagram showing a third exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention.

FIG. 23 is a memory cell circuit diagram of a switched capacitor typeanalog memory.

FIG. 24 is an outlined constitution diagram of a switched capacitor typeanalog memory.

FIG. 25 is a connection wiring diagram of a switched capacitor typeanalog memory.

FIGS. 26A to 26C are manufacturing process diagrams showing oneexemplified embodiment of a manufacturing method of a semiconductorimage sensor module according to the present invention.

FIGS. 27A and 27B are outlined constitution diagrams respectivelyshowing a fourth exemplified embodiment of a semiconductor image sensormodule according to the present invention.

FIGS. 28A and 28B are outlined constitution diagrams respectivelyshowing a fifth exemplified embodiment of a semiconductor image sensormodule according to the present invention.

FIGS. 29A and 29B are outlined constitution diagrams respectivelyshowing a sixth exemplified embodiment of a semiconductor image sensormodule according to the present invention.

FIGS. 30A and 30B are outlined constitution diagrams respectivelyshowing a seventh exemplified embodiment of a semiconductor image sensormodule according to the present invention.

FIGS. 31A and 31B are outlined constitution diagrams respectivelyshowing an eighth exemplified embodiment of a semiconductor image sensormodule according to the present invention.

FIGS. 32A and 32B are outlined constitution diagrams showing a ninthexemplified embodiment of a semiconductor image sensor module accordingto the present invention together with a manufacturing method thereof.

FIGS. 33A and 33B are manufacturing process diagrams showing amanufacturing method of the semiconductor image sensor module accordingto the eighth exemplified embodiment in FIG. 31A.

FIGS. 34A and 34B are manufacturing process diagrams showing amanufacturing method of the semiconductor image sensor module accordingto the eighth exemplified embodiment in FIG. 31B.

FIGS. 35A and 35B are outlined constitution diagrams showing a tenthexemplified embodiment of a semiconductor image sensor module accordingto the present invention together with a manufacturing method thereof.

FIGS. 36A and 36B are outlined constitution diagrams showing an eleventhexemplified embodiment of a semiconductor image sensor module accordingto the present invention together with a manufacturing method thereof.

FIGS. 37A and 37B are outlined constitution diagrams showing a twelfthexemplified embodiment of a semiconductor image sensor module accordingto the present invention together with a manufacturing method thereof.

FIG. 38 is an equivalent circuit diagram used for explanation of athirteenth exemplified embodiment of a semiconductor image sensor moduleaccording to the present invention.

FIG. 39 is an outlined constitution diagram showing a fourteenthexemplified embodiment of a semiconductor image sensor module accordingto the present invention.

FIG. 40 is a block diagram showing a constitution of a fifteenthexemplified embodiment of a semiconductor image sensor module accordingto the present invention.

FIG. 41 is a timing chart used for explaining an operation of thesemiconductor image sensor module according to the fifteenth exemplifiedembodiment.

FIG. 42 is a schematic cross-section diagram showing a sixteenthexemplified embodiment of a semiconductor image sensor module accordingto the present invention.

FIG. 43 is a timing chart used for explaining an operation of thesemiconductor image sensor module according to the sixteenth exemplifiedembodiment of the present invention.

FIG. 44 is an equivalent circuit diagram showing a constitution of apixel of a CMOS solid-state imaging device according to the sixteenthexemplified embodiment of the present invention.

FIGS. 45A to 45C are cross-section diagrams showing a manufacturingprocess of a back-illuminated type CMOS solid-state imaging deviceaccording to the sixteenth exemplified embodiment of the presentinvention (No. 1 thereof).

FIGS. 46A and 46B are cross-section diagrams showing a manufacturingprocess of a back-illuminated type CMOS solid-state imaging deviceaccording to the sixteenth exemplified embodiment of the presentinvention (No. 2 thereof).

FIGS. 47A and 47B are cross-section diagrams showing a manufacturingprocess of a back-illuminated type CMOS solid-state imaging deviceaccording to the sixteenth exemplified embodiment of the presentinvention (No. 3 thereof).

FIG. 48 is a schematic cross-section diagram showing a seventeenthexemplified embodiment of a semiconductor image sensor module accordingto the present invention.

FIGS. 49A to 49C are cross-section diagrams showing a manufacturingprocess of a back-illuminated type CMOS solid-state imaging deviceaccording to the seventeenth exemplified embodiment of the presentinvention (No. 1 thereof).

FIGS. 50A and 50B are cross-section diagrams showing a manufacturingprocess of a back-illuminated type CMOS solid-state imaging deviceaccording to the seventeenth exemplified embodiment of the presentinvention (No. 2 thereof).

FIGS. 51A and 51B are cross-section diagrams showing a manufacturingprocess of a back-illuminated type CMOS solid-state imaging deviceaccording to the seventeenth exemplified embodiment of the presentinvention (No. 3 thereof).

FIG. 52 is an outlined plane layout diagram of a semiconductor imagesensor module according to related art.

FIG. 53 is a cross-section diagram of a main portion of afront-illuminated type CMOS image sensor.

FIG. 54 is an outlined constitution diagram of a CCD image sensor.

FIG. 55 is an outlined constitution diagram of a CMOS image sensor.

FIGS. 56A and 56B are accumulation timing charts of a CCD image sensorand a CMOS image sensor.

FIGS. 57A and 57B are explanatory diagrams showing recorded picturedifference when high-speed imaging was carried out with a CCD imagesensor and a CMOS image sensor.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, exemplified embodiments of the present invention will beexplained with reference to the drawings

FIG. 1 shows a general constitution of a first exemplified embodiment ofa semiconductor image sensor module according to the present invention.A semiconductor image sensor module 51 according to the exemplifiedembodiment of the present invention is constituted by laminating a firstsemiconductor chip 52 provided with an image sensor in which a pluralityof pixels are arranged regularly and each of the pixels is constitutedby a photodiode as a photoelectric conversion element and a transistor,a second semiconductor chip 53 provided with an analog/digital converterarray composed of a plurality of analog/digital converters (a so-calledanalog/digital conversion circuit), and a third semiconductor chip 54provided with a memory element array including at least a decoder and asense amplifier.

The image sensor of the first semiconductor chip 52 in this example isconstituted by a so-called back-illuminated type CMOS image sensor inwhich a transistor forming region 56, in which transistors constitutinga unit pixel are formed, is formed on the chip front face side, and aphotodiode forming region 57 having an incidence plane where light Lenters and in which a plurality of photodiodes which become a pluralityof photoelectric conversion elements are regularly arranged twodimensionally, for example, in a two dimensional matrix form, is formedon the chip rear face side.

There is shown in FIG. 2 an example of a unit pixel of aback-illuminated type CMOS image sensor. In the back-illuminated typeCMOS image sensor 60 of this example, pixel separation regions 62 areformed in an imaging region 59 of a thinned semiconductor substrate, forexample, an n-type silicon substrate 61, and a plurality of MOStransistors Tr, each of which is composed of an n-type source-drainregion 64, a gate insulation film 65, and a gate electrode 66, areformed in a p-type semiconductor well region 63 of each pixel regionpartitioned by the pixel separation regions 62. These MOS transistors Trare so-called sensor transistors by means of an amplifier transistor, atransistor for XY selection switching and the like, and are formed onthe substrate front face side. The plurality of transistors Tr may beconstituted by, for example, 3 transistors, i.e., a readout transistorhaving a source-drain region, which becomes a floating diffusion regionFD, a reset transistor, and an amplifier transistor, or 4 transistors,i.e., the aforementioned 3 transistors and a vertical selectiontransistor. On the substrate front face side, there is formed amultilayer wiring layer 78 in which multilayer wirings 77 are formedthrough interlayer insulation films 76. Further, a support substrate 79for reinforcement, for example, by means of a silicon substrate or thelike, is joined on the multilayer wiring layer 78.

The photodiode PD is formed by an n+ charge accumulation region 68 a, ann-type semiconductor region 68 b, and p+ semiconductor regions 69 whichbecome accumulation layers formed on both the front and rear faces ofthe substrate for suppressing dark current. Then, a color filter 72 isformed on the substrate rear face side through a passivation film 71,and further, an on chip microlens 73 corresponding to each pixel isformed on the color filter 72. This imaging region 59 becomes aso-called photodiode PD-sensor circuit region.

On the other hand, with respect to the second semiconductor chip 53, aplurality of analog/digital converter arrays each of which is composedof a plurality of analog/digital converters are arranged twodimensionally.

In the third semiconductor chip 54, there is formed thereon a memoryarray in which memory element sub-arrays composed of a plurality ofmemory elements are arranged two dimensionally. The memory elementsub-array is constituted including a decoder and a sense amplifier. Eachmemory element sub-array is formed as a memory array block composed of aplurality of memory elements and including a decoder and senseamplifier, so as to correspond to each pixel array block in which, asdescribed later, a plurality of pixels are assembled as a group.

For the memory element, it is possible to use, for example, a volatilememory, which is represented by a DRAM or a SRAM, a floating gate typenonvolatile memory, an MONOS type nonvolatile memory or the like.

There is shown in FIG. 18 and FIG. 19 a general constitution of afloating gate type nonvolatile memory. As shown in FIG. 18, a floatingtype nonvolatile memory 101 is constituted such that a source region 103and a drain region 104 are formed in a semiconductor substrate 102 and afloating gate 105 and a control gate 106 are formed through a gateinsulation film. There are shown in FIG. 19 cell array connection wiringdiagrams, writing operations, and erasing operations of representativeNAND type, NOR type and AND type flash memories. Since contact of a bitline and a single cell can be omitted in the NAND type one, ideally theminimum cell size of 4F.sup.2 (F is ½ of a minimum pitch determined bydesigning rule) can be realized. Writing is based on the channel FNtunneling (Fowler-Nordheim Tunneling) method and erasing is based on thesubstrate FN tunneling emission method. High-speed random access ispossible in the NOR type in which writing is based on the CHE (ChannelHot Electron) method and erasing is based on the FN tunneling emissionmethod to the source terminal. Writing of the AND type is based on theFN tunneling of the drain terminal and reading out thereof is based onthe channel FN tunneling method. Writing speed of the NAND type flashmemory is 25-50 .mu.S which is slow, but, by increasing the paralleldegree in processing as shown in FIG. 4 and FIG. 5, high-speed datatransfer of GBPS (gigabyte/sec) becomes possible.

There is shown in FIG. 20 and FIG. 21 a general constitution of an MONOStype nonvolatile memory. As shown in FIG. 20, an MONOS type nonvolatilememory 111 is constituted such that a source region 113 and a drainregion 114 is formed in a semiconductor substrate 112, and a tunneloxide film 115, an Si3N4 charge trap layer 116, a top oxide film 117 anda gate polyelectrode 118 are formed sequentially. There are shown inFIG. 21 a cell array connection wiring diagram, a writing operation anderasing operations of the MONOS type memory. Programming is carried outby injecting a hot electron to the Si3N4 charge trap layer 116 based onthe CHE method and by changing the threshold. Erasing is carried out byinjecting a hot hole or by pulling-out based on the FN tunneling method.

The first semiconductor chip 52 provided with the CMOS image sensor 60and the second semiconductor chip 53 provided with the analog/digitalconverter array are laminated such that the front face side opposite tothe light incident side of the first semiconductor chip 52 faces thesecond semiconductor chip 53, and respective pads 81 and 82 forconnection are electrically connected through electroconductiveconnection bodies, for example, through bumps 83. Also, the secondsemiconductor chip 53 provided with the analog/digital converter arrayand the third semiconductor chip 54 laminated thereon and provided withthe memory element array are joined such that the analog/digitalconverter and the memory elements are electrically connected throughpenetration contact portions 84 passing through the second semiconductorchip 53.

Usually, the analog/digital converter requires 50 to 100 times of layoutarea to the area of 1 pixel. Consequently, it is constituted in thisexemplified embodiment such that a single analog/digital convertercollectively processes the number of pixels of around the layout area ofone analog/digital converter. Further, it is constituted such that dataof a plurality of pixels are saved in the memory elements of the thirdsemiconductor chip 54 laminated thereon. Usually, there is a data volumeof 10 to 14 bits per 1 pixel, so that there is arranged a memory elementarray having the number of bits corresponding to the product obtained bymultiplying the number of pixels corresponding to those directly on oneanalog/digital converter and the number of memory elements each of whichcan store the amount of information per 1 pixel.

FIG. 3 shows in a form of a schematic perspective view, a relation amongone pixel array block composed of the above-mentioned plurality ofpixels, one analog/digital converter, and one memory element sub-array(that is, memory array block) composed of a plurality of memory elementswhich store data corresponding to the number of pixels in the pixelarray block. The first semiconductor chip 52 as the image sensor, thesecond semiconductor chip 53 as the analog/digital converter array, andthe third semiconductor chip 54 as the memory element array arelaminated, and they are mutually connected such that one analog/digitalconverter 87 corresponds to one pixel array block 86 composed of aplurality of pixels and one memory element sub-array (memory arrayblock) 88 composed of a plurality of memory elements which can storeinformation of the pixel array block 86 corresponds to this oneanalog/digital converter 87.

FIG. 4 shows an example of data transfer of one pixel array block 86. Inthis example, the pixel array block 86 composed of 64 (=8.times.8)pieces of pixels 86 a corresponds to one analog/digital converter (ADC)87. Picture data are transferred from the pixel array block 86 to theanalog/digital converter 87 serially. Data is written from theanalog/digital converter 87 to the memory array block 88 serially with abus width corresponding to the resolution. In this example, 1 pixel dataare converted to 12 bits and are written in the memory array block 88.The memory array block 88 is provided with a sense amplifier 93 and adecoder 94 [X decoder 94X, Y decoder 94Y] which selects the pixels 86 a.Since the analog/digital converter 87 is arranged on the sensor, it isdesirable for the chip area efficiency that the number of pixels to beprocessed by one analog/digital converter 87 is selected such that thearea of the analog/digital converter 87 and the area of the pixel arrayblock 86 become comparable and that the memory array block 88 also has acomparable size since it is arranged on the analog/digital converter 87.Also, the memory array block 88 is arranged on the analog/digitalconverter 87. It is not always necessary that the pixel array block 86,the analog/digital converter 87, and the memory array block 88 are insuch a positional relation that one is located immediately aboveanother, and it is enough if respective taking out portions of thesignal wirings overlap each other.

FIG. 5 is a whole block diagram. There are provided with a pixel array121 in which a plurality of pieces of 64 pixels array blocks 86 arearranged, an analog/digital converter array 122 in which a plurality ofpieces of analog/digital converter arrays each composed of a pluralityof analog/digital converters 87 are arranged two-dimensionally such thatone analog/digital converter 87 corresponds to each pixel array block86, a memory array 123 in which a plurality of memory array blocks 88are arranged two-dimensionally, and a digital signal processing device124. Each of the pixel array 121, the analog/digital converter array122, the memory array 123, and the digital signal processing device 124is controlled by a control circuit 125. In this block diagram, data ofeach pixel in the 64 (=8.times.8) pixel array block 86 in the pixelarray 121 are transferred to one analog/digital converter 87 serially,and also, pixel data of each pixel array block 86 are transferred to thecorresponding analog/digital converter 87 in the analog/digitalconverter array 122 in parallel. The data transferred to theanalog/digital converter array 122 are written in the memory array 123after converting one pixel data to 12 bits in this example, by means ofparallel processing of the number of analog/digital converters.times.12bits. The data of this memory array 123 is processed by the digitalsignal processing device 124. In this manner, data of the whole pixelsor the pixels in one block are transferred in parallel, so that a veryhigh transfer speed can be realized as a system.

In this exemplified embodiment, the memory element array (memory arrayblock) 88 described above has the number of bits of around 500 to 1 kbits, and is provided with a readout circuit (sense amplifier), awriting circuit, and a decoder. For example, if the pixel size is 2.mu.m.sup.2 and the analog/digital conversion apparatus 87 is 100.mu.m.sup.2, it is enough if the number of pixels processed by oneanalog/digital converter 87 is 50 pieces, and the size of the memoryelement array provided on the analogue/digital converter 87 is oneincluding a decoder of 50.times.(10 to 14) bits. Supposing that theamount of information is maximum 14 bits and the cell occupancy in thememory array block is 60%, the memory cell area becomes 0.01.mu.m.sup.2, and it can be realized by a cell size of a 90 nm generationDRAM.

The rear face side of the first semiconductor chip 52 is formed mainlyas a photodiode PD array for a large portion thereof, so that anadequate aperture characteristic, that is, an aperture ratio can beobtained as a photodiode PD. Also, since an adequate aperture ratio canbe obtained, conversely a minute pixel can be manufactured.

The analog-to-digital converted signal is once held in the memoryelement cell. With respect to the writing period to the memory element,it can be transferred by .mu.S order if sequential accessing isperformed using, for example, a DRAM, so that the transfer time isadequately short as compared with an accumulation period of thephotodiode PD, and as a result, simultaneous shuttering of all thepixels can be realized.

As shown in FIG. 3, there may be included parity check bits 89 anddefect relieving redundant bits 90 in the memory element sub-array 88.

According to the semiconductor image sensor module 51 of the firstexemplified embodiment, by laminating and integrating the firstsemiconductor chip 52 provided with the back-illuminated type CMOS imagesensor 60; the second semiconductor chip 53 provided with theanalog/digital converter array composed of the plurality ofanalog/digital converters 87; and the third semiconductor chip 54provided with the memory array (memory element array) in which thememory element arrays are included, that is, a plurality of memoryelement sub-arrays (memory array blocks) 88 are arranged twodimensionally, it is possible to make the photodiode PD area on the rearface side, that is, the pixel aperture ratio adequately large. Thereby,pixel miniaturization corresponding to shrinkage of the optical systembecomes possible, and also, low noise equivalent to a CCD image sensorcan be realized. In particular, because production of a minute pixelhaving a large aperture ratio also becomes possible, a high resolutionsemiconductor image sensor module can be obtained. Also, because it isconstituted such that the pixel array 86 composed of a plurality ofpixels and the memory element array 88 composed of a plurality of memoryelements share one analog/digital converter 87 and the signal from thepixel array 86, which has been analog-to-digital converted in a shortperiod, is held in the memory element array 88 and thereaftersignal-processed, it is possible to carry out simultaneous shuttering ofall the pixels. Consequently, it is possible to provide a CMOS imagesensor-module that has a high sensitivity and that is capable ofsimultaneous electronic shuttering. The CMOS image sensor-module of thisexemplified embodiment is preferably applied, for example, to a digitalstill camera of a high-grade single lens reflex, a mobile phone or thelike.

In the first exemplified embodiment, the first, second and thirdsemiconductor chips 52, 53 and 54 have been laminated, however, it isalso possible, for example, to laminate the first semiconductor chip 52of the CMOS image sensor and the second semiconductor chip 53 of theanalog/digital converter array except the third semiconductor chip 54including the memory element array, arrange the third semiconductor chipin a necessary substrate or package together with the laminated body ofthe first and second semiconductor chips 52 and 53, and connect thesecond semiconductor chip 53 and the third semiconductor chip 54 throughan external wiring.

There is shown in FIG. 6 a general constitution of a second exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. A semiconductor image sensor module 99 according tothis exemplified embodiment is constituted similarly as mentioned aboveby laminating the first semiconductor chip 52 provided with the CMOSimage sensor 60 in which a plurality of pixels are arranged regularlyand each of the pixels is constituted by the photodiode forming region57 and the transistor forming region 56, the second semiconductor chip53 provided with an analog/digital converter array composed of aplurality of analog/digital converters, and the third semiconductor chip54 provided with a memory element array including at least a decoder anda sense amplifier.

Then, in this exemplified embodiment, a multivalued nonvolatile memory(hereinafter, referred to as a multivalued memory) is formed as thememory element of the third semiconductor chip 54. For this multivaluedmemory, it is possible to use, for example, a nonvolatile resistancerandom-access-memory (RRAM) by means of a thin film having huge magneticresistance, which was published in 193-196 pages of IEDM TechnicalDigest (2002).

One example of this RRAM (Resistance RAM) is shown in FIG. 7 (crosssection structure) and in FIG. 8 to FIG. 17 (programming).

There is shown in FIG. 8 a characteristic evaluation circuit of a simpleelement. There are shown in FIG. 9 a pulse application diagram and inFIG. 10 a voltage-current diagram.

In this RRAM, that is, a resistance-changing type multivalued memoryelement, as shown in FIG. 7, element separation regions 173 are formedin a silicon substrate 172, and a first, a second and a thirdsource/drain regions 174, 175 and 176 are formed in the substrate 172partitioned by the element separation regions 173. A first MOStransistor Tr1 is formed by the first and second source/drain regions174 and 175 and a gate electrode (so-called word line) 177 which isformed through an insulation film. Also, a second MOS transistor Tr2 isformed by the second and third source/drain regions 175 and 176 and agate electrode (so-called word line) 178 which is formed through aninsulation film. The second source/drain region 175 is connected with asense line 181 through a conductive plug 179, which passes through aninterlayer insulation film. On the other hand, the first and thirdsource/drain regions 174 and 176 are connected with resistance-changingtype multivalued memory elements 182 and 183 through the conductiveplugs 179 respectively. The other terminals of the resistance-changingtype multivalued memory elements 182 and 183 are connected with a bitline 180. For the memory elements 182 and 183, it is possible to use,for example, a material of SrZrO3: Cr system. There exists in additionfor the memory material, PCMO (Pr0.7Ca0.3MnO3), a material in which Cuor Ag has been added to chalcogenide, or the like. Pt electrodes 185 and186 are formed above and below this memory material 184 and thereby thememory elements 182 and 183 are formed. 1 bit is constituted by onememory element and one MOS transistor. In FIG. 7, there are constitutedmemory elements for 2 bits, which share the sense line. There is shownin FIG. 8 a circuit of a single memory element.

First, it will be reviewed about a case of a binary resistance-changingtype memory.

A pulse voltage is applied to the memory element as shown in FIG. 9. Theswitching voltage threshold changes according to the material and thefilm thickness. In FIG. 9, the threshold voltage is made to be +−0.7 V.Although it is actually not a target in many cases, it will be explainedhere assuming that absolute values of the threshold voltages of “0”writing and “1” writing are equal. When the pulse voltage is increasedto the threshold or more, the resistance value changes (4.fwdarw.5,10.fwdarw.11: (see FIG. 10)). In an actual readout operation, a voltagelower than the threshold is applied and “0” or “1” is judged from theflowing current. In many cases, a middle resistance having a resistancevalue between “0” resistance value and “1” resistance value is created,and “0” or “1” is judged by comparing this resistance and the memoryresistance. There is shown in FIG. 11 a connection wiring diagram of amemory array. FIG. 12 shows an explanatory diagram of the “0” writingoperation. When writing “0” (high resistance) in a “1” (low resistance)bit, the word line of a selection cell is made ON and “0” writing iscarried out by adding a pulse voltage to the bit line such that avoltage of the threshold voltage or more is added to the memory element.

“1” writing (Reset) will be explained using FIG. 13. The word line ofthe “1” writing operation selecting cell is made ON and “1” writing iscarried out by adding a pulse voltage between the sense line and the bitline such that a voltage of the threshold voltage or more is added tothe memory element. FIG. 14 is a diagram for explaining a readoutoperation. A voltage adequately lower than the threshold voltage isapplied to the memory element between the sense line and the bit line,this current is converted to a voltage, and “1” or “0” is judged bycomparing it with the current flowing in the middle resistance(reference).

FIG. 15 illustrates a current-voltage characteristic example of amultivalued memory having four thresholds. In the case of a multivaluedmemory, in the example of the current-voltage characteristic in FIG. 15in which the thresholds become plural, the readout for V0, V1′, V2′ andV3′ are carried out by a voltage (Vread in the drawing) lower than V1.In the case of a writing operation to a higher level than the previouslevel, writing of level 2 is carried out by a voltage between V1 and V2,writing of level 3 is carried out by a voltage between V2 and V3, andwriting of level 4 is carried out by a voltage of V3 or more. Also, inthe case of writing-in to a level lower than the previous state, writingof level 3 is carried out by a voltage between V3′ and V2′, writing oflevel 2 is carried out by a voltage between V2′ and V1′, and writing oflevel 1 is carried out by a voltage between V1′ and V0. Readout iscarried out by performing comparison of sizes with the middle resistanceat respective levels that have been generated. The multivalue controlcan be performed with the bias voltage control from the outside of thememory array, so that the cell array circuit itself is the same as inthe binary value (see FIG. 11). The multivalued memory can be realizedeven by changing the writing pulse.

FIG. 16 is a diagram showing an observation result of the aforesaid IEDM(International Electron Device Meeting) Technical Digest. It will beexplained with respect to this ideal case referring to FIG. 17. As shownin the drawing, the element resistance changes step-wise depending onthe number of program pulses. The reset is carried out with applying apulse of the opposite direction. For the readout, the resistance valueis detected by applying a voltage that is adequately low as comparedwith the program voltage. Also in this case, the cell array circuit isthe same as that in FIG. 11.

In this manner, a RAM can record if the number of writing pulses of thememory is adjusted in response to the amount of the accumulated electriccharge of the photodiode PD. Also, readout can be carried out withapplying a current to the memory and detecting the difference ofresistance values (voltages). Supposing that the data volume per onepixel is x and an n value memory is used, the number of memory bits yconstituting the memory cell per one pixel becomes n-th root of x, andit is possible to decrease the number of memory bits in the memory arrayblock.

In FIG. 6, other constitutions are similar to those of the firstexemplified embodiment described above, so that the same referencenumerals are put on the corresponding portions and the repetitiveexplanation thereof will be omitted.

According to the CMOS image sensor-module 99 in the second exemplifiedembodiment, by using a nonvolatile multivalued memory for the memoryelement constituting the memory element array of the third semiconductorchip, the number of memory elements which records informationcorresponding to one pixel is decreased drastically. Then, similarly asthe first exemplified embodiment, the rear face side is formed mainly asa photodiode PD array for a large portion thereof, so that an adequateaperture ratio of a photodiode PD can be obtained, and also it ispossible to produce a minute pixel. The analog-to-digital convertedsignal is once held in the memory element cell once. With respect to thewriting period to the memory element, data can be transferred by .mu.Sorder if sequential access is performed, which is adequately short to anaccumulation period of the photodiode PD, and simultaneous shuttering ofall the pixels can be realized. Consequently, it is possible to providea CMOS image sensor-module that has a high sensitivity and is capable ofsimultaneous electronic shuttering.

There is shown in FIG. 22 a general constitution of a third exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. A semiconductor image sensor module 100 according tothis exemplified embodiment is constituted by laminating the firstsemiconductor chip 52 provided with the CMOS image sensor 60 similar tothe previously described one in which a plurality of pixels are arrangedregularly and each of the pixels is constituted by the photodiodeforming region 57 and the transistor forming region 56, and the fourthsemiconductor chip 55 in which a memory element array is formed.

Then, in this exemplified embodiment, the memory element constitutingthe memory element array of the fourth semiconductor chip 55 is formedby means of an analog type nonvolatile memory represented, for example,by a switched capacitor. In this analog type nonvolatile memory, forexample, in a switched capacitor, a potential corresponding to a chargeamount accumulated by the pixel photoresist PD is generated by anamplifier, and according to this potential, the amount of accumulatedelectric charge of the capacitor is controlled. The charge accumulatedin the capacitor is proportional to the signal charge amplified by theamplifier. In this case, it is enough if memory elements correspondingto the number of pixels are provided.

There is shown in FIG. 23 a memory cell circuit diagram using a switchedcapacitor. This memory cell circuit 130 is constituted by including amemory capacitor 131, a switch for writing 132, a writing dummy switch133, a D-type flip-flop 134 for writing, a switch for readout 135 and aD-type flip-flop for readout 136. Each of the switches 132, 133 and 135is constituted of an NMOS transistor Trn and a PMOS transistor Trp. Inother words, each of the switches is constituted of CMOS transistors. Inthis switched capacitor type analog memory, with respect to writing, theswitch for writing 132 is made ON when a Q output of the D-type flipflop for writing 134 becomes a high level (High) and the memorycapacitor 131 is charged so as to be of a voltage between Vin and Vc.With respect to readout, the switch for readout 135 (so-called CMOS passtransistor) is made ON when an output Q of the D-type flip-flop forreadout 136 becomes a high level (High) and an output is derivedtherefrom. It is allowed to insert an amplifier in the succeeding stagethereof. Data of the switched capacitor type analog memory aretransferred to an analog/digital converter (ADC).

FIG. 24 shows one example of a cross section structure of a switchedcapacitor. The drawing shows the portion of a memory capacitor and aswitch for readout. An NMOS transistor Trn is formed by forming elementseparation regions 142 in a p-type semiconductor substrate 141, and an-type source region 143, a drain region 144, and a gate electrode 145by means of 1 layer polysilicon through a gate insulation film in thesubstrate 141 partitioned by the element separation regions 142. Ap-type region 146 is a potential supply region provided for fixing thesubstrate potential. A PMOS transistor Trp is formed by forming a n-typesemiconductor well region 147 in the p-type semiconductor substrate 141,and a p-type source region 148, a drain region 149, and a gate electrode150 by means of 1 layer polysilicon through a gate insulation film inthis n-type semiconductor well region 147. An n-type region 151 is apotential supply region provided for fixing the well region potential.CMOS transistors constituting the switch for readout 135 are formed bythese NMOS transistor Trn and PMOS transistor Trp. On the other hand,there is formed on the element separation region 142, the memorycapacitor 131 which is constituted by laminating a first electrode 153by means of 1 layer polysilicon, a dielectric film (interlayerinsulation film) 154, and a second electrode 155 by means of 2 layerpolysilicon. A wiring 158 connected with each region through eachconductive plug 157, which passes through an interlayer insulation film156, is formed. Only 1 layer metal is shown for the wiring 158, but itdoes not matter even if there is provided a wiring pattern of aplurality of layers. For the memory capacitor 131, it is possible to usea capacitor using a 2 layer metal or a MOS capacitor other than theabove-described one.

There is shown in FIG. 25 a block diagram using an analog memory arrayby means of switched capacitor type analog memories. A plurality ofswitched capacitor type analog memories 130 are arranged in aline-column form to form an analog memory array 161. It is constitutedsuch that the analog memories 130 in each column are connected with awriting control signal input line 162 and a readout control signal inputline 163. Corresponding to the analog memories 130 in respective linesof the analog memory cell 161, pixel array blocks 164 are connected onthe input side of the analog memory array 161 and analog/digitalconverters 165 are connected on the output side thereof, respectively.The analog signal inputted from each pixel cell of the pixel arrayblocks 164 to the analog memory array 161 is accumulated sequentially ineach of the analog memories (memory cells) 130 serially. With respect toreadout, signals are inputted sequentially to the analog/digitalconverter 165 corresponding to the pixel array block 164 starting fromthe head memory cell according to readout control signals, and digitalsignals are outputted.

Other constitutions are similar to those of the first exemplifiedembodiment described above, so that repetitive explanation thereof willbe omitted by putting the same reference numerals on the correspondingportions.

Writing to this analog type nonvolatile memory is carried out byrelating each plurality of pixels to the memory element sub-array inwhich information of the plurality of pixels is stored and by seriallyaccessing the information of the plurality of pixels for writing in thecorresponding memory array. With respect to the writing period,transferring can be attained in .mu.S order or less if this analogmemory is used and sequential access is employed.

According to the semiconductor image sensor module 100 in the thirdexemplified embodiment, by laminating and integrating the firstsemiconductor chip 52 provided with the back-illuminated type CMOS imagesensor and the fourth semiconductor chip 55 provided with the analogtype nonvolatile memory array, similarly as in the first exemplifiedembodiment described above, the rear face side of the firstsemiconductor chip 52 is formed mainly as a photodiode PD array for alarge portion thereof, so that an adequate aperture ratio of aphotodiode PD can be obtained, and also it is possible to produce aminute pixel. Further, with respect to the writing period to theanalogue type nonvolatile memory, because data can be transferred in.mu.S order or less, which is adequately short relative to anaccumulation period of the photodiode PD, simultaneous shuttering of allthe pixels can be realized.

Next, an exemplified embodiment of a manufacturing method of asemiconductor image sensor module according to the present inventionwill be explained using FIG. 26. This example is a case that the methodis applied to the manufacture of the semiconductor image sensor module51 according to the first exemplified embodiment in FIG. 1.

First, as shown in FIG. 26A, a transistor forming region is formed on afirst front face side of a semiconductor substrate, and the firstsemiconductor chip 52 is formed in which a forming region for aphotodiode which becomes a photoelectric conversion element is formed ona second front face which is the rear face of the substrate.Specifically, as shown in FIG. 2, a pixel transistor is formed on thefront face side of a thinned semiconductor substrate, and a photodiodeis formed so as to make the rear face side a light incidence plane. Amultilayer wiring layer is formed on the front face side of thesemiconductor substrate, and a support substrate for reinforcement, forexample, a silicon substrate, is joined thereon. A color filter isformed on the rear face side of the semiconductor substrate through apassivation film, and further, an on chip microlens is formed. Thinningof the semiconductor substrate is carried out using grinding and CMP(Chemical Mechanical Polishing) or the like after joining the supportsubstrate. Then, the pads 81 connected with the multilayer wiring areformed on the support substrate, for example through penetrationcontacts.

Next, as shown in FIG. 26B, at least an analog/digital converter arrayis formed in the semiconductor substrate, the pads 82 for connection ofrespective analog/digital converters are formed on the front face of thesemiconductor substrate, and further, the second semiconductor chip 53,in which the penetration contact portions 84 which pass through thesemiconductor substrate so as to be exposed to the rear face side of thesemiconductor substrate have been formed, is formed. This semiconductorsubstrate is also thinned.

The conductive micro bumps 83 are provided on the pads 82 of this secondsemiconductor chip 53 and the pads 82 of the second semiconductor chip53 and the pads 81 on the front face side of the first semiconductorchip 52 are connected electrically through this micro bumps 83 with thesecond semiconductor chip 53 faced downward.

Next, as shown in FIG. 26C, the third semiconductor chip 54, in which amemory array has been formed with arranging memory element arrays twodimensionally, is formed. This third semiconductor chip 54 is laminatedon the second semiconductor chip 53, and the second analog/digitalconverter array and the memory element array of the third semiconductorchip 54 are connected electrically through the penetration contactportions 84. Thereby, the semiconductor image sensor module 51 providedwith the aimed CMOS image sensor is obtained.

According to the manufacturing method of the semiconductor image sensormodule in this exemplified embodiment, mainly a back-illuminated typeCMOS image sensor is formed on the first semiconductor chip 52, so thatthe aperture ratio of the photodiode becomes large and it is possible toattempt a high sensitivity even in the case of a minute pixel. Then, thefirst, the second and the third semiconductor chips 52, 53 and 54 arelaminated and mutual electric connections thereof are carried out bymeans of the micro bumps 83 and the penetration contact portions 84, sothat it is possible to make wirings of the mutual connections theshortest and to accumulate data of the photodiode in the memory elementarray at a high speed, and simultaneous shuttering of all the pixelsbecomes possible. Accordingly, it is possible to manufacture asemiconductor image sensor module provided with a CMOS image sensor,that has a high sensitivity and that is capable of simultaneouselectronic shuttering.

In the exemplified embodiment of FIG. 26, the second semiconductor chip53 in which the analog/digital converter array has been formed islaminated so as to be connected on the front face side of the firstsemiconductor chip 52 in which the CMOS image sensor has been formed,with the second semiconductor chip 53 faced downward, but instead ofthis configuration, it is allowed to employ a configuration thatconnection between the first semiconductor chip 52 and the secondsemiconductor chip 53 is performed by a penetration contact portionwhich passes through the second semiconductor chip 53.

It is possible to manufacture also the semiconductor image sensor module99 according to the second exemplified embodiment shown in FIG. 6fundamentally by a manufacturing method similar to the one shown in FIG.25.

In addition, it is possible to manufacture the semiconductor imagesensor module 100 according to the third exemplified embodiment in FIG.22 by providing micro bumps to the pads of the fourth semiconductor chip55 in which the analog type nonvolatile memory array has been formedaccording to the process of FIG. 25B and by connecting the fourthsemiconductor image sensor module 55 with the first semiconductor chip52 with the fourth semiconductor image sensor module 55 faced downward.

There are shown in FIGS. 27A and 27B general constitutions of a fourthexemplified embodiment of a semiconductor image sensor module accordingto the present invention. Semiconductor image sensor modules 166 and 167according to this exemplified embodiment are constituted similarly asdescribed above by laminating the first semiconductor chip 52 providedwith the CMOS image sensor 60 in which a plurality of pixels arearranged regularly and each pixel is constituted by the photodiodeforming region 57 and the transistor forming region 56, the secondsemiconductor chip 53 provided with an analog/digital converter arraycomposed of a plurality of analog/digital converters, and the thirdsemiconductor chip 54 provided with a memory element array including atleast a decoder and a sense amplifier. The first semiconductor chip 52and the second semiconductor chip 53 are electrically connected betweenthe pads 81 and 82 for connection, which have been formed respectively,through, for example, the bumps (micro bumps) 83. Also, the secondsemiconductor chip 53 and the third semiconductor chip 54 are joinedeach other such that the analog/digital converters and the memoryelements are connected electrically through penetration contact portions84 passing through the second semiconductor chip 53. Then, in thisexemplified embodiment, the analog/digital converters 87 are formed onthe undersurface side of the second semiconductor chip 53.

The semiconductor image sensor module 166 in FIG. 27A is an example inwhich the penetration contact portion 84 is not connected with the pad82 directly and is formed deviated from the position immediately abovethe pad 82. In other words, this semiconductor image sensor module 166is suitably applied to a case in which it is not desired to directlyconnect the penetration contact portion 84 with the pad 82.

The semiconductor image sensor module 167 of FIG. 27B is an example inwhich the penetration contact portion 84 is formed just above the pad82. FIG. 27B is a schematic diagram, and it appears as if theanalog/digital converter 87 intervenes between the penetration contactportion 84 and the pad 82, but actually, it is formed such that thepenetration contact portion 84 is connected with the pad 82 directly andthe analog/digital converter is formed around the penetration contactportion 84. In other words, this semiconductor image sensor module 167is suitably applied to a case in which it is desired to directly connectthe penetration contact portion 84 with the pad 82.

According to the semiconductor image sensor modules 166 and 167 in thefourth exemplified embodiment in FIGS. 27A and 27B, it is possible totransmit signals to the analog/digital converter 87 without picking up anoise in the penetration contact portion 84.

There are shown in FIGS. 28A and 28B general constitutions of a fifthexemplified embodiment of a semiconductor image sensor module accordingto the present invention. Semiconductor image sensor modules 168 and 169according to this exemplified embodiment is constituted similarly asmentioned above by laminating the first semiconductor chip 52 providedwith the CMOS image sensor 60 in which a plurality of pixels arearranged regularly, the second semiconductor chip 53 provided with ananalog/digital converter array composed of a plurality of analog/digitalconverters, and the third semiconductor chip 54 provided with a memoryelement array including at least a decoder and a sense amplifier. Thefirst semiconductor chip 52 and the second semiconductor chip 53 areelectrically connected between the pads 81 and 82 for connection whichhave been formed respectively, through, for example, the bumps (microbumps) 83. Also, the second semiconductor chip 53 and the thirdsemiconductor chip 54 are joined each other such that the analog/digitalconverter and the memory elements are connected electrically throughpenetration contact portions 84 passing through the second semiconductorchip 53. Then, in this exemplified embodiment, the analog/digitalconverters 87 are formed on the upper surface side of the secondsemiconductor chip 53. The signal of each pixel from the firstsemiconductor chip 52 passes through the penetration contact portion 84and is analog/digital converted by the analog/digital converter 87.

The semiconductor image sensor module 168 in FIG. 28A is an example inwhich the penetration contact portion 84 is not connected with the pad82 directly and is formed deviated from the position immediately abovethe pad 82. In this case, a wiring layer 170 connected with the pad 82is formed on the undersurface side of the second semiconductor chip 53,and the pad 82 and the penetration contact portion 84 are connectedelectrically through this wiring layer 170. In other words, thissemiconductor image sensor module 168 is suitably applied to a case thatit is not desired to connect the penetration contact portion 84 with thepad 82 directly.

The semiconductor image sensor module 169 of FIG. 28B is an example inwhich the penetration contact portion 84 is formed just above the pad82. Also, FIG. 28B is a schematic diagram, and similarly as mentionedabove, the penetration contact portion 84 is connected with theanalog/digital converter 87 so as to be positioned at the center portionof the analog/digital converter 87 on the upper surface side. In otherwords, this semiconductor image sensor module 169 is suitably applied toa case that it is desired to connect the penetration contact portion 84with the pad 82 directly.

The semiconductor image sensor modules 168 and 169 according to thefifth exemplified embodiment of FIGS. 28A and 28B are preferably appliedto a case that distortion is large on the undersurface side of thesecond semiconductor chip 53 and it is difficult to form theanalog/digital converter 87 on the undersurface side.

There are shown in FIGS. 29A and 29B general constitutions of a sixthexemplified embodiment of a semiconductor image sensor module accordingto the present invention. Semiconductor image sensor modules 187 and 188according to this exemplified embodiment are constituted similarly asmentioned above by laminating the first semiconductor chip 52 providedwith the CMOS image sensor 60 in which a plurality of pixels arearranged regularly and each pixel is constituted by the photodiodeforming region 57 and the transistor forming region 56, the secondsemiconductor chip 53 provided with an analog/digital converter arraycomposed of a plurality of analog/digital converters, and the thirdsemiconductor chip 54 provided with a memory element array including atleast a decoder and a sense amplifier. The first semiconductor chip 52and the second semiconductor chip 53 are electrically connected betweenthe pads 81 and 82 for connection which have been formed respectively,through, for example, the bumps (micro bumps) 83. Also, the secondsemiconductor chip 53 and the third semiconductor chip 54 are joinedeach other such that the analog/digital converter and the memoryelements are connected electrically through penetration contact portions84 passing through the second semiconductor chip 53. Then, in thisexemplified embodiment, the memory array blocks 88 are formed on theundersurface side of the third semiconductor chip 54. The signalanalog/digital converted by the analog/digital converter array of thesecond semiconductor chip 53 is stored in the memory array block 88.

The semiconductor image sensor module 187 in FIG. 29A is an example inwhich the penetration contact portion 84 in the second semiconductorchip 53 is not connected with the pad 82 directly and is formed deviatedfrom the position immediately above the pad 82. In this case, a wiringlayer 170 connected with the pad 82 is formed on the undersurface sideof the second semiconductor chip 53, and the pad 82 and the penetrationcontact portion 84 are connected electrically through this wiring layer170. In other words, this semiconductor image sensor module 187 issuitably applied to a case in which it is not desired to connect thepenetration contact portion 84 in the second semiconductor chip 53 andthe pad 82 directly.

The semiconductor image sensor module 188 of FIG. 29B is an example inwhich the penetration contact portion 84 in the second semiconductorchip 53 is formed just above the pad 82. In other words, thissemiconductor image sensor module 188 is suitably applied to a case inwhich the penetration contact portion 84 in the second semiconductorchip 53 and the pad 82 are connected directly.

The semiconductor image sensor modules 187 and 188 according to thefifth exemplified embodiment of FIGS. 29A and 29B are preferably appliedto a case in which distortion is large on the upper surface side of thethird semiconductor chip 54 and it is difficult to form the memory arrayblock 88 on the upper surface side.

There are shown in FIGS. 30A and 30B outlines of a seventh exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. Semiconductor image sensor modules 189 and 190according to this exemplified embodiment is constituted similarly asmentioned above by laminating the first semiconductor chip 52 providedwith the CMOS image sensor 60 in which a plurality of pixels arearranged regularly and each pixel is constituted by the photodiodeforming region 57 and the transistor forming region 56, the secondsemiconductor chip 53 provided with an analog/digital converter arraycomposed of a plurality of analog/digital converters, and the thirdsemiconductor chip 54 provided with a memory element array including atleast a decoder and a sense amplifier. The first semiconductor chip 52and the second semiconductor chip 53 are electrically connected betweenthe pads 81 and 82 for connection which have been formed respectively,through, for example, the bumps (micro bumps) 83. Also, the secondsemiconductor chip 53 and the third semiconductor chip 54 are joinedeach other such that the analog/digital converter and the memoryelements are connected electrically through penetration contact portions84 passing through the second semiconductor chip 53 and penetrationcontact portions 84′ passing through the third semiconductor chip 53.Then, in this exemplified embodiment, the memory array blocks 88 areformed on the upper surface side of the third semiconductor chip 54, andthe penetration contact portions 84 and 84′ are connected so as to faceeach other. The signal analog/digital converted by the analog/digitalconverter array of the second semiconductor chip 53 is stored in thememory array block 88 by way of the penetration contact portions 84 and84′.

The semiconductor image sensor module 189 in FIG. 30A is an example inwhich the penetration contact portion 84 in the second semiconductorchip 53, which is connected with the penetration contact portion 84′ inthe third semiconductor chip 54, is not connected with the pad 82directly and is formed deviated from the position immediately above thepad 82. In this case, a wiring layer 170 connected with the pad 82 isformed on the undersurface side of the second semiconductor chip 53, andthe pad 82 and the penetration contact portion 84 are connectedelectrically through this wiring layer 170. In other words, thissemiconductor image sensor module 187 is suitably applied to a case inwhich it is not desired to connect the penetration contact portion 84 inthe second semiconductor chip 53 and the pad 82 directly.

The semiconductor image sensor module 190 of FIG. 30B is an example inwhich the penetration contact portion 84 in the second semiconductorchip 53, which is connected with the penetration contact portion 84′ inthe third semiconductor chip 54, is formed just above the pad 82. Inother words, this semiconductor image sensor module 190 is suitablyapplied to a case in which the penetration contact portion 84 in thesecond semiconductor chip 53 and the pad 82 are connected directly.

The semiconductor image sensor modules 189 and 190 according to FIGS.30A and 30B are preferably applied to a case in which distortion islarge on the undersurface side of the third semiconductor chip 54 and itis difficult to form the memory array block 88 on the undersurface side.

There are shown in FIGS. 31A and 31B outlines of an eighth exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. Semiconductor image sensor modules 189 and 190according to this exemplified embodiment are constituted by laminatingthe first semiconductor chip 52 and a second semiconductor chip 193. Thefirst semiconductor chip 52 is provided with the CMOS image sensor 60 inwhich a plurality of pixels are arranged regularly and each pixel isconstituted by the photodiode forming region 57 and the transistorforming region 56 the CMOS image sensor 60. The second semiconductorchip 193 is provided with an analog/digital converter array composed ofa plurality of analog/digital converters on the lower portion side andat the same time provided with a memory element array including at leasta decoder and a sense amplifier on the upper portion side. Also, in thesecond semiconductor chip 193, the analog/digital converters and thememory elements are connected electrically through the penetrationcontact portions 84 which pass through the region in which theanalog/digital converter array is formed.

The semiconductor image sensor module 191 of FIG. 31A is constitutedsuch that the pads 82 are formed on the undersurface of the secondsemiconductor chip 193, the pads 81 are formed on the upper surface ofthe first semiconductor chip 52, and the first semiconductor chip 52 andthe second semiconductor chip 193 are pressed to contact each otherwhile applying heat so as to connect the pad 82 and 81. By bonding theregion other than the pads 81 and 82 by means of adhesive material, thebonding strength between the first and the second semiconductor chips 52and 193 is further intensified.

In the semiconductor image sensor module 192 of FIG. 31B, pads are notformed, the penetration contact portions 84 are formed in the region inwhich the analog/digital converter array is formed on the lower portionside of the second semiconductor chip 193, and contact portion 84″ areformed in the transistor forming region 56 of the first semiconductorchip 52. Then, the semiconductor image sensor module 192 is constitutedby connecting the first semiconductor chip 52 and the secondsemiconductor chip 193 by causing the contact portions 84 and 84″ toface each other and to contact each other by applying heat and pressure.

There are shown in FIG. 32 outlines of a ninth exemplified embodiment ofa semiconductor image sensor module according to the present inventiontogether with a method of manufacturing the same. In the semiconductorimage sensor module 194 according to this exemplified embodiment, first,as shown in FIG. 32A, the first semiconductor chip 52 and the secondsemiconductor chip 193 are formed. The first semiconductor chip 52 isprovided with the CMOS image sensor 60 in which a plurality of pixelsare arranged regularly and each pixel is constituted by the photodiodeforming region 57 and the transistor forming region 56, and the pads 81are formed on the upper surface of the transistor forming region 56. Thesecond semiconductor chip 193 is provided with an analog/digitalconverter array composed of a plurality of analog/digital converters onthe lower portion side and at the same time is provided with a memoryelement array including at least a decoder and a sense amplifier on theupper portion side. In this second semiconductor chip 193, the pads 82are formed on the undersurface of the lower side portion in which theanalog/digital converter array has been formed, the penetration contactportions 84 which pass through the lower side portion are formed, and atthe same time, the pads 82 and the penetration contact portions 84 areconnected through the wiring layers 170.

Next, as shown in FIG. 32B, the pads 81 of the first semiconductor chip52 and the pads 82 of the second semiconductor chip 193 are joinedthrough the bumps (micro bumps) 83 by applying heat and pressure.Parallel connection in units of several pixels becomes possible by meansof these bumps 83. In this manner, the semiconductor image sensor module194 according to the ninth exemplified embodiment is manufactured.

There is shown in FIG. 33 a manufacturing method of the semiconductorimage sensor module 191 of FIG. 31A. First, as shown in FIG. 33A, thefirst semiconductor chip 52 and the second semiconductor chip 193 areformed. The first semiconductor chip 52 is provided with the CMOS imagesensor 60 in which a plurality of pixels are arranged regularly and eachpixel is constituted by the photodiode forming region 57 and thetransistor forming region 56, and the pads 81 are formed on the uppersurface of the transistor forming region 56. The second semiconductorchip 193 is provided with an analog/digital converter array composed ofa plurality of analog/digital converters on the lower portion side andat the same time is provided with a memory element array including atleast a decoder and a sense amplifier on the upper portion side. In thissecond semiconductor chip 193, the pads 82 are formed on theundersurface of the lower side portion in which the analog/digitalconverter array is formed, the penetration contact portions 84 whichpass through the lower side portion are formed, and at the same time,the pads 82 and the penetration contact portions 84 are connectedthrough the wiring layers 170.

Next, as shown in FIG. 33B, the first semiconductor chip 52 and thesecond semiconductor chip 193 are joined by applying heat and pressuresuch that the pads 81 and 82 are connected facing each other. By formingthe pads 81 and 82 small, parallel connection in units of several pixelsbecomes possible. By bonding the region other than the connection regionof the pads 81 and 82 by means of adhesive material, the bondingstrength is further intensified. In this manner, the semiconductor imagesensor module 191 of FIG. 31A is manufactured.

There is shown in FIG. 34 a manufacturing method of the semiconductorimage sensor module 192 of FIG. 31B. First, as shown in FIG. 34A, thefirst semiconductor chip 52 and the second semiconductor chip 193 areformed. The first semiconductor chip 52 is provided with the CMOS imagesensor 60 in which a plurality of pixels are arranged regularly and eachpixel is constituted by the photodiode forming region 57 and thetransistor forming region 56, and the contact portions 84″ are formed inthe transistor forming region 56. The second semiconductor chip 193 isprovided with an analog/digital converter array composed of a pluralityof analog/digital converters on the lower portion side and at the sametime is provided with a memory element array including at least adecoder and a sense amplifier on the upper portion side. In this secondsemiconductor chip 193, the penetration contact portions are formed onthe lower side portion in which the analog/digital converter array hasbeen formed, so as to pass therethrough. No pads are formed on the firstand the second semiconductor chips 52 and 193.

Next, as shown in FIG. 34B, the first semiconductor chip 52 and thesecond semiconductor chip 193 are joined by applying heat and pressuresuch that the contact portion 84″ and the penetration contact portion 84are connected facing each other. In this manner, the semiconductor imagesensor module 192 of FIG. 31B is manufactured. In this manufacturingmethod, alignment is difficult, but it is possible to increase thenumber of pixels per unit area to the utmost. Also, in the exemplifiedembodiments in FIG. 32 to FIG. 34, it is possible in the semiconductorimage sensor module 192 of FIG. 34 to make the height from theundersurface of the first semiconductor chip to the upper surface of thesecond semiconductor chip the smallest.

There are shown in FIGS. 35 to 37 outlines of tenth to twelfthexemplified embodiments of a semiconductor image sensor module accordingto the present invention together with a method of manufacturing thesame. The semiconductor image sensor modules according to the tenth totwelfth exemplified embodiments are constituted by joining a firstsemiconductor chip 196 including the photodiode forming region 57, thetransistor forming region 56, and the analog/digital converter array195, and a second semiconductor chip 197 in which a memory array hasbeen formed. In the first semiconductor chip 196, the analog/digitalconverter array 195 is connected on the side of the transistor formingregion 56. By employing such a constitution, the analog signal generatedin the photodiode forming region 57 can be converted to a digital signalby the analog/digital converter without picking up a noise in, forexample, the bumps (micro bumps) 83 in FIG. 32B. For this reason, thefinal picture output signal contains less noise.

There is shown in FIG. 35 a semiconductor image sensor module of thetenth exemplified embodiment. In a semiconductor image sensor module 198according to this exemplified embodiment, the first semiconductor chip196 and the second semiconductor chip 197 are formed. The firstsemiconductor chip 196 is constituted to include the CMOS image sensorconstituted by the photodiode forming region 57 formed on the lowerportion side and the transistor forming region 56 formed in theintermediate portion and the analog/digital converter array 195 formedon the upper portion side. In the region in which the analog/digitalconverter array 195 has been formed, there are formed the penetrationcontact portions 84, and the pads 81 connected with the penetrationcontact portions 84 are formed on the upper surface. The secondsemiconductor chip 197 is constituted by forming a memory array and byforming the pad 82 on the undersurface.

Next, as shown in FIG. 35B, the first semiconductor chip 196 and thesecond semiconductor chip 197 are joined by forming the bumps (microbumps) 83 between the pads 81 and the pads 82 and by applying heat andpressure In this manner, the semiconductor image sensor-block 198 of thetenth exemplified embodiment is manufactured. In this semiconductorimage sensor-block 198, parallel connection in units of several pixelsbecomes possible by means of the bumps 83.

There is shown in FIG. 36 a semiconductor image sensor module of aneleventh exemplified embodiment. With respect to the semiconductor imagesensor module 199 according to this exemplified embodiment, first, asshown in FIG. 36A, the first semiconductor chip 196 and the secondsemiconductor chip 197 are formed similarly as mentioned above. Theconstitutions of the first semiconductor chip 196 and the secondsemiconductor chip 197 are similar to those of FIG. 35, so that detailedexplanations thereof will be omitted by putting the same referencenumerals on the corresponding portions thereof.

Next, as shown in FIG. 36B, the first semiconductor chip 196 and thesecond semiconductor chip 197 are joined by applying heat and pressuresuch that the pads 81 and 82 are connected facing each other. In thismanner, the semiconductor image sensor-block 199 of the eleventhexemplified embodiment is manufactured. In this semiconductor imagesensor module 199, by forming the pads 81 and 82 small, parallelconnection in units of several pixels becomes possible. It should benoted that by bonding the region other than the connection region of thepads 81 and 82 by means of adhesive material, the bonding strengthbetween the first and the second semiconductor chips 196 and 197 isfurther intensified.

There is shown in FIG. 37 a semiconductor image sensor module of atwelfth exemplified embodiment. With respect to the semiconductor imagesensor module 200 according to this exemplified embodiment, first, asshown in FIG. 37A, the first semiconductor chip 196 and the chip 197 areformed similarly as mentioned above. The constitution of the firstsemiconductor chip 196 is similar to the one of FIG. 35 other than thatno pads are formed, so that detailed explanations thereof will beomitted by putting the same reference numerals on the correspondingportions thereof. Also, the second semiconductor chip 197 is constitutedby forming a memory array and at the same time by forming contactportions 201 so as to be exposed to the undersurface. Various forms ofthe contact portion 201 can be conceived and, for example, it is alsopossible to form it so as to pass therethrough. No pads are formed inthis second semiconductor chip 197.

Next, as shown in FIG. 37B, the first semiconductor chip 196 and thesecond semiconductor chip 197 are joined by applying heat and pressuresuch that the penetration contact portions 84 and the contact portions201 are connected facing each other. In this manner, the semiconductorimage sensor module 200 of the twelfth exemplified embodiment ismanufactured. In the manufacturing method of the semiconductor imagesensor module 200 according to this twelfth exemplified embodiment,alignment is difficult, but it is possible to increase the number ofpixels per unit area to the utmost. Also, in the exemplified embodimentsfrom the tenth exemplified embodiment to the twelfth exemplifiedembodiment, it is possible in the semiconductor image sensor module 200of the second exemplified embodiment to make the height from theundersurface of the first semiconductor chip 196 to the upper surface ofthe second semiconductor chip 197 the smallest.

Next, it will be explained with respect to a thirteenth exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. The semiconductor image sensor module according tothis exemplified embodiment has a constitution in respective exemplifiedembodiments described above such that the floating diffusion is sharedby a plurality of pixels in the transistor forming region thereof.Thereby, it is possible to increase the photodiode area per unit pixelarea.

In addition, it is possible to employ a constitution that under acondition that the floating diffusion is shared by a plurality of pixelsin the transistor forming region, further, the amplifier transistor isalso shared by a plurality of pixels. With this constitution also, it ispossible to further increase the photodiode area per unit pixel area.

There is shown in FIG. 38 an equivalent circuit in a pixel in a casethat a portion of the pixel transistor circuit is shared by four pixelsin the transistor forming region.

This equivalent circuit is constituted such that there are providedseparate transfer transistors 212 corresponding to four light receivingportions (photodiodes PD) 210 of four pixels, these transfer transistors212 are connected with a common floating diffusion (FD) portion to shareone amplifier transistor 214 and one reset transistor 220 or the like inthe subsequent stage. The signal charge is connected to a signal outputline through the amplifier transistor 214. It is also possible to switchthe output to the signal output line by providing a transfer transistorbetween the amplifier transistor 214 and the signal output line.

It is possible to apply the pixel structure sharing this floatingdiffusion portion with a plurality of pixels to the back-illuminatedtype CMOS image sensor according to the present invention. For example,when the micro bump requires an area corresponding to 4 pixels, thefloating diffusion FD, the amplifier transistor 214, and the resettransistor 220 are shared by 4 pixels. In this manner, even in a casethat the necessary area of the micro bump is large, it needs not designone pixel with a large area corresponding to the necessary area of themicro bump thereof, so that it is possible to increase the number ofpixels per unit area.

Also, the description has been made with respect to a case that aportion of the pixel transistor circuit is shared by four pixels in thetransistor forming region, but a case is also conceivable that a portionof the pixel transistor circuit is shared by three pixels in thetransistor forming region or a case that a portion of the pixeltransistor circuit is shared by six pixels in the transistor formingregion.

Next, it will be explained with respect to a fourteenth exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. The semiconductor image sensor module according tothis exemplified embodiment is constituted by being equipped with colorcoating technology that arranges pixels in a zigzag (in so-calledoblique arrangement). With the constitution of this pixel arrangement,the imaginary number of pixels per unit pixel area is increased ascompared with a square pixel arrangement. It is possible to apply thispixel arrangement to the back-illuminated type CMOS image sensoraccording to the present invention. For example, in a case that themicro bump requires an area for a plurality of pixels, if the floatingdiffusion FD is shared by a plurality of pixels as in the thirteenthexemplified embodiment described above, it needs not design one pixelwith a large area corresponding to the necessary area of the micro bump.Consequently, is possible to increase the number of pixels per unitarea, and further, the imaginary number of pixels per unit pixel area isincreased as compared with a square pixel arrangement.

There is shown in FIG. 39 a general constitution of a semiconductorimage sensor module according to a fourteenth exemplified embodiment ofthe present invention, that is, a back-illuminated type CMOS imagesensor. The semiconductor image sensor of this exemplified embodiment isan example that color-separation is carried out without using an on chipcolor filter. A semiconductor image sensor 261 according to thisexemplified embodiment is formed by being provided with an imagingregion 264 formed on the front face of the same semiconductor chip 262(corresponding to first semiconductor chip 52), which becomes a lightreceiving region in which a plurality of pixels 263 are arrangedtwo-dimensionally, and with peripheral circuits 265 and 266 arranged onthe outside of this imaging region 264 for selection of the pixels 263and for signal output. It is allowed that the peripheral circuits 265and 266 are not within the photodiode forming region 57 mentioned above,and they may be located within the transistor forming region 56. Theperipheral circuit 265 is constituted by a vertical scanning circuit(so-called vertical register circuit) which is positioned on the side ofthe imaging region 264. The peripheral circuit 266 is constituted by ahorizontal scanning circuit (so-called horizontal register circuit)positioned on the lower side of the imaging region 264 and an outputcircuit or the like (including a signal amplification circuit, an A/Dconverter circuit, a synchronous signal generating circuit or the like).

In the imaging region 264, a plurality of pixels are arranged in aso-called oblique arrangement. More specifically, it is constituted by afirst pixel group in which a plurality of pixels 263A are arrangedtwo-dimensionally with predetermined pitches W1 in the horizontal andvertical directions approximately in a lattice shape, and a second pixelgroup in which a plurality of pixels 263B are arranged two-dimensionallydeviated by approximately ½ pitch of the aforesaid pitch W1 both in thehorizontal direction and in the vertical direction with respect to thefirst pixel group, and the pixels 263A and 263B are arranged and formedjust in a square lattice shape deviated obliquely. In this example, thepixels 263B are arranged in odd lines, and the pixel 263A are arrangedin even lines deviated by ½ pitch. For the on chip color filters,primary color filters of red (R), green (G) and blue (B) are used inthis example. In FIG. 39, the designation of R/B shows that it is eitherone of red (R) and blue (B). More specifically, the red (R) and the blue(B) are arranged alternatively along the vertical direction in FIG. 39so as to be red (R)-blue (B)-red (R)-blue (B) . . . .

Next, it will be explained with respect to a fifteenth exemplifiedembodiment of a semiconductor image sensor module according to thepresent invention. The semiconductor image sensor module of thisexemplified embodiment is an example in which an ADC shared by pixels isinstalled. Here, there is shown a flow of charge signals in the case ofany one exemplified embodiment of the first to fourteenth exemplifiedembodiments mentioned above. Due to sharing of FD by pixels (thirteenthexemplified embodiment) and zigzag coating (fourteenth exemplifiedembodiment), charge signals outputted from the transistor forming regionare transmitted to the inside of the AD conversion array.

FIG. 40 is a block diagram showing a constitution of a solid-stateimaging device applied to a semiconductor image sensor module accordingto the fifteenth exemplified embodiment, for example, a CMOS imagesensor equipped with a pixel parallel ADC.

As shown in FIG. 40, a CMOS image sensor 310 according to thisexemplified embodiment is configured to include a line or unit pixelscanning circuit 313, a column processing unit 314, a reference voltagesupply unit 315, a column or unit pixel scanning circuit 316, ahorizontal output line 317, and a timing control circuit 318, inaddition to a pixel array unit 312 in which a large number of unitpixels 311 each including a photoelectric conversion element arearranged in a line-column form (in a matrix form) two dimensionally.

In this system constitution, the timing control circuit 318 generates,based on the master clock MCK, clock signals which become the basis ofthe operations of the line or unit pixel scanning circuit 313, thecolumn or unit pixel processing unit 314, the reference voltage supplyunit 315, the column or unit pixel scanning circuit 316 and the like,and control signals and the like, and supplies them to the line or unitpixel scanning circuit 313, the column processing unit 314, thereference voltage supply unit 315, the column or unit pixel scanningcircuit 316 and the like.

Also, a peripheral drive system and a signal processing system whichdrive or control each unit pixel 311 of the pixel array unit 312, thatis, the line or unit pixel scanning circuit 313, the reference voltagesupply unit 315, the column or unit pixel scanning circuit 316, thetiming control circuit 318 and the like, are integrated in a transistorforming region 356 on a same chip 319 (corresponding to the firstsemiconductor chip 52) as the pixel array unit 312.

For the unit pixel 311, although graphic indication is omitted here, itis possible to use a pixel of 3 transistor constitution, which includes,in addition to a photoelectric conversion element (for example,photodiode), for example, a transfer transistor transferring chargesobtained by performing photoelectric conversion in aforesaidphotoelectric conversion element to the FD (floating diffusion) portion,a reset transistor controlling the potential of this FD portion, and anamplifier transistor outputting signals corresponding to the potentialof the FD portion, and further, it is possible to use a pixel of 4transistor constitution which further includes a selection transistorseparately for carrying out pixel selection or the like.

In the pixel array unit 312, unit pixels 311 are arranged twodimensionally in m columns and n lines, and at the same time, to thepixel arrangement of these m lines and n columns, line or unit pixelcontrol lines 321 (321-1 to 321-n) are wired for respective lines orunit pixels, and column or unit pixel signal lines 322 (322-1 to 322-m)are wired for respective columns or unit pixels. Alternatively, to thepixel arrangement of these m lines and n columns, it is allowed to wirepixel control lines for respective pixels so as to control each pixel.Respective terminals of the line control lines 321-1 to 321-n areconnected with corresponding output terminals of the line scanningcircuit 313. The line or unit pixel scanning circuit 313 is constitutedby a shift register or the like and carries out controls of line or unitpixel addresses of the pixel array unit 312 and line or unit pixelscanning, through the line or unit pixel control lines 321-1 to 321-n.The column or unit pixel processing unit 314 includes ADCs(analog-to-digital conversion circuits) 323-1 to 323-m provided, forexample, for respective pixel columns or unit pixels of the pixel arrayunit 312, that is, for respective columns or unit pixel signal lines322-1 to 322-m, and outputs analog signals outputted from the unitpixels 311 of the pixel array unit 312 for respective columns or unitpixels by converting them to digital signals.

This exemplified embodiment is characterized by the constitution ofthese ADCs 323-1 to 323-m, and it will be described later with respectto the details thereof.

The reference voltage supply unit 315 includes, for example, a DAC(digital-to-analog conversion circuit) 351 as a means for generating areference voltage Vref of a so-called ramp (RAMP) waveform whose levelchanges in an inclined state as time elapses. It should be noted thatthe means for generating the reference voltage Vref of a ramp waveformis not limited to the DAC 351. The DAC 351 generates the referencevoltage Vref of a ramp waveform based on the clock CK given from thistiming control circuit 318 under a control by a control signal CS1 givenfrom the timing control circuit 318 and supplies it to the ADCs 323-1 to323-m of the column or unit pixel processing unit 314.

Here, it will be explained specifically with respect to details of theconstitution of the ADCs 323-1 to 323-m by which this exemplifiedembodiment is characterized. It should be noted that each of the ADCs323-1 to 323-m has a constitution that the AD conversion operation canbe carried out selectively between the operation mode corresponding to ausual frame rate mode by means of a progressive scanning system in whichinformation of all of the unit pixels 311 is read out and the operationmode corresponding to a high-speed frame rate mode which increases theframe rate as much as N times, for example, 2 times as compared with theoccasion of the usual frame rate mode by setting the exposure period ofthe unit pixel 311 to 1/N. The changeover of these operation modes isexecuted according to the control by control signals CS2, CS3 given fromthe timing control circuit 318. Also, to the timing control circuit 318,instruction information is given from an external system controller (notshown) for changing the operation mode between the usual frame rate modeand the high-speed frame rate mode.

The ADC 323-1 to 323-m have the same constitution and are arranged inthe AD conversion array in the first semiconductor chip 52 or the secondsemiconductor chip described above. Also, it is allowed to arrange thecolumn or unit pixel processing unit 314, a comparator 331, for example,an up/down counter (in the drawing, marked as U/D CNT) 332 which is acounting means, a transfer switch 333 and a memory device 334, a DAC351, the reference voltage supply unit 315, and the timing controlcircuit 318 in the AD conversion array of the first semiconductor chip52 or the second semiconductor chip. Also, different from theconstitution that the reference voltage supply unit 315, the column orunit pixel scanning circuit 316, and the timing control circuit 318 areprovided in the transistor forming region 56 of aforesaid firstsemiconductor chip 52, it is allowed to arrange the reference voltagesupply unit, the column or unit pixel scanning circuit, and the timingcontrol circuit in the AD conversion array within the firstsemiconductor chip 52 or the second semiconductor chip.

Here, it will be explained by taking the ADC 323-m for each column orunit pixel. The ADC 323-m has a constitution including the comparator331, for example the up/down counter (in the drawing, marked as U/D CNT)332 which is a counting means, the transfer switch 333, and the memorydevice 334.

The comparator 331 compares signal voltage Vx of the column or unitpixel signal line 322-m corresponding to the signal outputted from eachunit pixel 311 of the n-th column of the pixel array unit 312 with thereference voltage Vref of a ramp waveform supplied from the referencevoltage supply unit 315 and for example when the reference voltage Vrefis larger than the signal voltage Vx, the output Vco becomes a “H”level, and when the reference voltage Vref is equal to or less than thesignal voltage Vx, the output Vco becomes a “L” level.

The up/down counter 332 is an asynchronous counter, and is provided withthe clock CK from the timing control circuit 318 simultaneously with theDAC 351 under the control by the control signal CS2 given from thetiming control circuit 318, and by carrying out a down (DOWN) count orup (UP) count in synchronism with this clock CK, a comparison periodfrom the start to the end of the comparison operation is measured.Specifically, in the usual frame rate mode, in a signal reading-outoperation from one unit pixel 311, the comparison period on the firstreadout is measured by carrying out a down-count on the occasion of thefirst readout operation and the comparison period on the second readoutis measured by carrying out an up-count on the occasion of the secondreadout operation. On the other hand, in the high-speed frame rate mode,a count result with respect to a unit pixel 311 of a certain line ismaintained as it is, and subsequently, with respect to a unit pixel 311of a next line, the comparison period on the occasion of the firstreadout is measured by carrying out a down-count from the previous countresult on the occasion of the first readout operation and the comparisonperiod on the occasion of the second readout is measured therefrom bycarrying out an up-count on the occasion of the second readoutoperation.

In the usual frame rate mode, the transfer switch 333 becomes an ON(closed) state at the time point when the count operation of the up/downcounter 332 with respect to a unit pixel 311 of a certain line iscompleted under the control by means of the control signal CS3 givenfrom the timing control circuit 318, and transfers the count result ofthe up/down counter 332 to the memory device 334. On the other hand, inthe high-speed frame rate mode of, for example, N=2, it remains in anOFF (open) state at the time point when the count operation of theup/down counter 332 with respect to a unit pixel 311 of a certain lineis completed, and subsequently, it becomes an ON state at the time pointwhen the count operation of the up/down counter 332 with respect to aunit pixel 311 of a next line is completed, and the count result forvertical 2 pixels of this up/down counter 332 is transferred to thememory device 334. In this manner, the analog signals which are suppliedfor respective columns or unit pixels by way of column or unit pixelsignal lines 322-1 to 322-m from respective unit pixels 311 of the pixelarray unit 312 are converted to digital signals of N bits according torespective operations of the comparator 331 and the up/down counter 332in the ADC 323 (323-1 to 323-m) and stored in the memory device 334(334-1 to 334-m).

The column or unit pixel scanning circuit 316 is constituted by a shiftregister or the like and carries out control of line or unit pixeladdresses and scanning of column or unit pixels of the ADCs 323-1 to323-m in the column or unit pixel processing unit 314. Under the controlby means of this line or unit pixel scanning circuit 316, the digitalsignals of N bits AD-converted in respective ADCs 323-1 to 323-m areread out sequentially to the horizontal output line 317 and outputted asimage data by way of this horizontal output line 317.

Although not shown particularly because it is not related directly tothis exemplified embodiment, it should be noted that it is also possibleto provide a circuit applying various kinds of signal processes to theimage data outputted by way of the horizontal output line 317 or thelike, other than the aforesaid components. In the CMOS image sensor 310equipped with an ADC with parallel column or unit pixels according tothis exemplified embodiment having the aforesaid constitution, becauseit is possible to transfer the count result of the up/down counter 332selectively to the memory device 334 through the transfer switch 333, itis possible to control the count operation of the up/down counter 332and the readout operation of the count result of this up/down counter332 to the horizontal output line 317 independently.

Next, it will be explained with respect to the operation of the CMOSimage sensor 310 according to the fifteenth exemplified embodiment ofthe aforesaid constitution by using a timing chart of FIG. 41.

Here, explanation with respect to the specific operation of the unitpixel 311 will be omitted, however, as well known, the reset operationand the transfer operation are carried out in each unit pixel 311, andin the reset operation, the potential of the FD portion when the unitpixel is reset to a predetermined potential is outputted as a resetcomponent from the unit pixel 311 to the column or unit pixel signallines 322-1 to 322-m, and in the transfer operation, the potential ofthe FD portion when the charge by means of photoelectric conversion istransferred from the photoelectric conversion element is outputted as asignal component from the unit pixel 311 to the column or unit pixelsignal lines 322-1 to 322-m.

A certain line or unit pixel i is selected by means of line or unitpixel scanning by the line or unit pixel scanning circuit 313, and aftera first readout operation from the unit pixel 311 of the selected lineor unit pixel i to the column or unit pixel signal lines 322-1 to 322-mhas been stabilized, a reference voltage Vref having a ramp waveform isapplied from the DAC 351 to each comparator 331 of the ADCs 323-1 to323-m, thereby the comparison operation with respect to each of thesignal voltages Vx of the column or unit pixel signal lines 322-1 to322-m and the reference voltage Vref is carried out in the comparator331. At the same time when the reference voltage Vref is applied to thecomparator 331, the clock CK is applied from the timing control circuit318 to the up/down counter 332, thereby in this up/down counter 332, thecomparison period in the comparator 331 on the occasion of the firstreadout operation is measured by the down count operation.

Then, when the reference voltage Vref and the signal voltage Vx of thecolumn or unit pixel signal lines 322-1 to 322-m become equal to eachother, the output Vco of the comparator 331 is inverted from the “H”level to the “L” level. Receiving this polarity inversion of the outputVco of the comparator 321, the up/down counter 332 stops the down countoperation and holds the counted value corresponding to the firstcomparison period in the comparator 331. In this first readoutoperation, as previously noted, the reset component .DELTA.V of the unitpixel 311 is read out. In this reset component .DELTA.V, a fixed patternnoise which fluctuates with respect to each unit pixel 311 is includedas an offset.

However, because fluctuation of this reset component .DELTA.V is smallgenerally, and also, the reset level is common for all the pixels, thesignal voltage Vx of each of the column or unit pixel signal lines 322-1to 322-m is almost well-known. Consequently, on the occasion of thereadout of the first reset component .DELTA.V, it is possible to shortenthe comparison period by adjusting the reference voltage Vref.

In this exemplified embodiment, comparison of the reset component.DELTA.V is carried out during the count period for 7 bits (128 clock).In the second readout operation, in addition to the reset component.DELTA.V, the signal component Vsig corresponding to the amount ofincident light of each unit pixel 311 is read out by an operationsimilar to the readout operation of the first reset component .DELTA.V.More specifically, after the second readout from the unit pixel 311 ofthe selection line or unit pixel i to the column or unit pixel signallines 322-1 to 322-m has been stabilized, the reference voltage Vref isapplied from the DAC 351 to each comparator 331 of the ADCs 323-1 to323-m, thereby the comparison operation with respect to each of thesignal voltages Vx of the column or unit pixel signal lines 322-1 to322-m and the reference voltage Vref is carried out in the comparator331. At the same time, the second comparison period in this comparator331 is measured in the up/down counter 332 by an up count operationconversely to the first one.

In this manner, by making the count operation of the up/down counter 332a down count operation at the first time and an up count operation atthe second time, a subtraction process of (second comparisonperiod)−(first comparison period) is carried out in this up/down counter332 automatically. Then, when the reference voltage Vref and the signalvoltage Vx of the column signal lines 322-1 to 322-m become equal toeach other, the output Vco of the comparator 331 is inverted inpolarity, and receiving this polarity inversion, the count operation ofthe up/down counter 332 stops. As a result, the counted valuecorresponding to the result of the subtraction process of (secondcomparison period)-(first comparison period) is held in the up/downcounter 332. It is calculated as (second comparison period)−(firstcomparison period)=(signal component Vsig+reset component.DELTA.V+offset component of ADC 323)−(reset component .DELTA.V+offsetcomponent of ADC 323)=(signal component Vsig), and owing to the abovetwo readout operations and the subtraction process in the up/downcounter 332, the offset component of each of the ADCs 323 (323-1 to323-m) is also removed in addition to the reset component .DELTA.Vincluding the fluctuation of each unit pixel 311, so that it is possibleto extract only the signal component Vsig corresponding to the amount ofincident light of each unit pixel 311.

Here, the process for removing the reset component .DELTA.V includingfluctuation of each unit pixel 311 is a so-called CDS (correlated doublesampling) process. On the occasion of the second readout, because thesignal component Vsig corresponding to the amount of incident light isread out, it is necessary to greatly change the reference voltage Vrefin order to judge the magnitude of the amount of light in a wide range.Consequently, it is constituted in the CMOS image sensor 310 accordingto this exemplified embodiment such that comparison after readout of thesignal component Vsig is carried out during the count period for 10 bits(1024 clocks). In this case, the compared number of bits is differentbetween the first time and the second time, but by making inclination ofthe ramp waveform of the reference voltage Vref identical for both ofthe first and second times, the accuracy of AD conversion can be madeequal to each other, so that a correct subtraction result can beobtained as a result of the subtraction process of (second comparisonperiod)−(first comparison period) by means of the up/down counter 332.

After the termination of a series of AD conversion operations mentionedabove, a digital value of N bits is held in the up/down counter 332.Then, the digital values of N bits (digital signals) which have beenAD-converted in respective ADCs 323-1 to 323-m of the column processingunit 314 are outputted sequentially to the outside by way of thehorizontal output line 317 having an N-bit width by means of column orunit pixel scanning by the column or unit pixel scanning circuit 316.Thereafter, similar operations are repeated sequentially for respectivelines or unit pixels, and thereby a two dimensional picture isgenerated. Also, in the CMOS image sensor 310 equipped with the columnor unit pixel parallel ADC according to this exemplified embodiment,each of the ADCs 323-1 to 323-m has a memory device 334, so that it ispossible to execute the readout operation and the up/down countoperation in parallel with respect to the unit pixels 311 of(i+1).sup.th line while transferring the digital value after ADconversion to the memory device 34 and outputting it externally from thehorizontal output line 317 with respect to the unit pixels 311 ofi.sup.th line.

According to this exemplified embodiment, in a solid-state imager devicehaving a constitution that analog signals outputted from the unit pixelthrough the column signal line are converted to digital values and areread out, even if the exposure period of the unit pixel is shortened byadding respective digital values among a plurality of unit pixels to beread out, it never occurs as a result that the amount of information ofone pixel decreases, so that it is possible to attempt achieving a highframe rate mode, without incurring sensitivity lowering.

It is possible to form the penetration contact portions (inside of thefirst, second and third semiconductor chips) and the contact portions84″ and 201 in all the exemplified embodiments described above by Cu,Al, W, WSi, Ti, TiN, silicide or a combination thereof.

There is shown, in FIG. 42, a sixteenth exemplified embodiment of asemiconductor image sensor module according to the present invention.FIG. 42 is a schematic cross-section diagram showing a constitution of asemiconductor image sensor module mounting a back-illuminated type CMOSsolid-state imaging device. A semiconductor image sensor module 400according to this exemplified embodiment is formed, for example, bymounting a sensor chip 401 a which is a back-illuminated type CMOSsolid-state imaging device provided with an imaging pixel unit on aninterposer (intermediate substrate) 403 and a signal processing chip 402which is provided with a peripheral circuit unit of a signal process orthe like.

In the sensor chip 401 a, an interlayer insulation layer 420 is formedon a support substrate 430, and buried wiring layers 421 are buriedinside of the layer 420. A semiconductor layer 412 is formed in theupper layer of the layer 420 and a surface insulation film 411 is formedon the front face thereof. There are formed, in the semiconductor layer412, a photodiode 414 which becomes a photoelectric conversion element,electrodes 413 for testing, and the like. Also, a portion of the buriedwiring layers 421 becomes a gate electrode formed through a gateinsulation film with respect to the semiconductor layer 412, and thus aMOS transistor 415 is constituted. Further, there are formed supportsubstrate penetrating wirings 431 which pass through the supportsubstrate 430 to be connected with the buried wiring layers 421, andthere are formed, on the front faces of the support substratepenetrating wirings 431, protrusion electrodes (bumps) 432 which projectfrom the front face of the support substrate 430. The bumps (microbumps) 432 are protrusion like metal electrodes formed by electrolyticplating or the like on pads which are smaller than a usual pad electrodeused for wire bonding.

The sensor chip 401 a having the constitution mentioned above is aso-called back-illuminated type CMOS solid-state imaging device in whichwhen light is illuminated from the surface insulation film 411 side tothe photodiode 414 formed in the semiconductor layer 412, signal chargeis generated and accumulated in the photodiode. The MOS transistor 415has the functions of transfer of signal charge accumulated in thephotodiode 414 to the FD portion and signal amplification or resettingand the like. In the constitution mentioned above, the semiconductorlayer is obtained by thinning the rear face of the semiconductorsubstrate, and has a structure of being pasted with the supportsubstrate 430 in order to stabilize the substrate shape.

As described above, the CMOS solid-state imaging device according tothis exemplified embodiment is a back-illuminated type solid-stateimaging device in which there are formed buried wirings connected with aplurality of pixels on one surface of the semiconductor layer in which aplurality of pixels including photoelectric conversion elements andfield effect transistors have been formed, and the other surface of thesemiconductor layer becomes a light receiving surface of thephotoelectric conversion element.

The sensor chip 401 a mentioned above is mounted by flip chip on theinterposer 403, in which the wirings 440 and the insulation layer 441for insulating them have been formed, from the support substrate 430side which is the opposite side of the light illumination side such thatthe land, which is formed by causing a portion of the front face of thewiring to be exposed from the opening portion of the insulation layer,and the bump are joined.

On the other hand, the signal processing chip 402 in which peripheralcircuit units have been formed is mounted on the interposer 403 by flipchip, for example, through bumps.

The semiconductor image sensor module 400 having such a constitution ismounted on another mounting substrate together with the interposer 403,and is connected electrically to be used, for example, by means of thewire bonding 442 or the like. For example, there is formed, on theinterposer 403, an electrode PAD for evaluating the function of 1 chipmade by connecting the aforesaid sensor chip (CMOS solid-state imagingdevice) 401 a and the signal processing chip 402.

FIG. 43 is a block diagram showing a constitution of an image sensor(corresponding to semiconductor image sensor module) installing a CMOSsolid-state imaging device according to this exemplified embodiment.FIG. 44 is an equivalent circuit diagram showing a pixel constitution ofa CMOS solid-state imaging device according to this exemplifiedembodiment. The image sensor according to this exemplified embodiment isconstituted by an imaging pixel unit 512, a V selection means (verticaltransfer register) 514, an H selection means (horizontal transferregister) 516, a timing generator (TG) 518, a S/H-CDS (samplinghold-correlated double sampling) circuit unit 520, an AGC unit 522, anA/D conversion unit 524, a digital amplifier unit 526 and the like. Itis possible, for example, to take a configuration that the imaging pixelunit 512, the V selection means 514, the H selection means 516, and theS/H & CDS circuit unit 520 are assembled on 1 chip collectively to bethe sensor chip 401 a in FIG. 42 and the remaining circuit units areassembled collectively on the signal processing chip 402. Alternatively,it is also possible to configure such that only the imaging pixel unit512 is formed in the sensor chip 401 a.

In the imaging pixel unit 512, a large number of pixels are arranged twodimensionally in a matrix form, and in each pixel, as shown in FIG. 44,a photodiode (PD) 600 which is a photoelectric conversion element forgenerating and accumulating the signal charge corresponding to theamount of received light is provided, and further, there are providedfour MOS transistors, i.e., a transfer transistor 620 for transferringthe signal charge converted and accumulated by this photodiode 600 to afloating diffusion portion (FD portion) 610, a reset transistor 630 forresetting the voltage of the FD portion 610, an amplifier transistor 640for outputting an output signal corresponding to the voltage of the FDportion 610, and a selection (address) transistor 650 for outputting theoutput signal of the this amplifier transistor 640 to a vertical signalline 660.

In the pixel having such a constitution, the signal charge convertedphotoelectrically in the photodiode 600 is transferred to the FD portion610 by the transfer transistor 220. The FD portion 610 is connected withthe gate of the amplifier transistor 640, and the amplifier transistor640 constitutes a source follower with a constant current source 670provided outside of the imaging pixel unit 512, so that when the addresstransistor 650 is turned ON, a voltage corresponding to the voltage ofthe FD portion 610 is outputted to the vertical signal line 660. Also,the reset transistor 630 resets the voltage of the FD portion 610 to aconstant voltage not depending on the signal charge (to a drive voltageVdd in FIG. 44). Also, in the imaging pixel unit 512, various kinds ofdriving wirings for driving and controlling respective MOS transistorsare wired in the horizontal direction, respective pixels of the imagingpixel unit 512 are selected in horizontal line (pixel line) unitssequentially in the vertical direction by means of the V selection means514, and the MOS transistors of respective pixels are controlled byvarious kinds of pulse signals from the timing generator 518, therebysignals of respective pixels are read out to the S/H-CDS unit 520 foreach pixel column by way of the vertical signal line 660.

The S/H-CDS unit 520 provides a S/H-CDS circuit for each pixel column ofthe imaging pixel unit 512 and carries out signal processing such as aCDS (correlated double sampling) or the like with respect to the pixelsignal read out from each of the pixel columns of the imaging pixel unit512. The H selection means 516 outputs the pixel signal from the S/H-CDSunit 520 to the AGC unit 522. The AGC unit 522 carries out apredetermined gain control with respect to the pixel signal from theS/H-CDS unit 520 selected by the H selection means 516 and outputs thepixel signal to the A/D conversion unit 524. The A/D conversion unit 524converts the pixel signal from the AGC unit 522 from an analog signal toa digital signal and outputs it to the digital amplifier unit 526. Thedigital amplifier unit 526 carries out necessary amplification and/orbuffering to the digital signal output from the A/D conversion unit 524and outputs it from an external terminal which is not shown. The timinggenerator 518 supplies various kinds of timing signals also torespective portions other than the pixels of the imaging pixel unit 512mentioned above.

It becomes possible for the semiconductor image sensor module (that is,CMOS image sensor) 400 according to the sixteenth exemplified embodimentmentioned above to input the signals outputted from the pixels of theCMOS image sensor to the signal process device directly through themicro bumps with respect to each pixel unit or each unit of a pluralityof pixels, without inputting the output signals from the pad electrodein the chip periphery to the signal process device after outputtingsignals outputted from the pixels to the pixel peripheral circuit, as inthe past. Thereby, it becomes possible to provide a highly functionaldevice that is fast in the signal process speed between the devices andis highly advanced and in which the image sensor and the signal processdevice are made by 1 chip. Also, the aperture ratio of the photodiode isimproved, chip utilization is improved, and simultaneous shuttering ofall the pixels can be realized.

It will be explained with respect to a manufacturing method of theback-illuminated type CMOS solid-state imaging device according to thesixteenth exemplified embodiment. First, as shown in FIG. 45A, forexample, an insulation film 411 which is composed of oxide silicon orthe like and which becomes a surface insulation film by post-process isformed on the front face of a semiconductor substrate 410 composed ofsilicon or the like by means of a thermal oxidation method, a CVD(chemical vapor deposition) method or the like. Further, for example, asemiconductor layer 412 of silicon or the like is formed for an upperlayer of the insulation film 411, for example, by means of a bondingmethod, an epitaxial growth method or the like, and thereby a SOI(semiconductor on insulator) substrate is formed. Here, an electrode 413for testing is formed in the semiconductor layer 412 beforehand.

Next, as shown in FIG. 45B, for example, a pn junction is formed byion-injecting p-type conductive impurity in the n-type semiconductorlayer 412, thereby the photodiode 414 is formed in the semiconductorlayer 412 as a photoelectric conversion element, further, a gateelectrode is formed on the front face of the semiconductor layer 412through a gate insulation film, the MOS transistor 415 is formed byconnecting the gate electrode with the photodiode 414 and the like, andthereby a plurality of pixels having the constitution mentioned aboveare formed. Further, for example, the interlayer insulation layer 420which covers the MOS transistor is formed. At that time, the buriedwiring layers 421 are formed while being buried in the interlayerinsulation layer 420 so as to be connected with the transistor, thesemiconductor layer 412 and the like.

Next, as shown in FIG. 45C, the support substrate 430 composed of asilicon substrate, an insulating resin substrate or the like is bondedto the upper layer of the interlayer insulation layer 420 for example bythermal compression using heat-hardening resin as the adhesive agent orthe like.

Next, as shown in FIG. 46A, the support substrate 430 is thinned fromthe opposite side of the bonded surface for example by mechanicalgrinding or the like.

Next, as shown in FIG. 46B, the support substrate penetrating wirings431 passing through the support substrate 430 are formed so as to beconnected with the buried wiring layers 421.

It is possible to form this, for example, by pattern-forming a resistfilm by a photolithographic process and carrying out etching such as dryetching or the like to form an opening portion reaching the buriedwiring layer 421 in the support substrate 430, and by burying a lowresistance metal of copper or the like.

Next, as shown in FIG. 47A, for example, the bumps 432 projecting fromthe front face of the support substrate 430 are formed on the frontfaces of the support substrate penetrating wirings 431 by means of ametal plating process or the like.

Next, as shown in FIG. 47B, for example, the semiconductor substrate 410is thinned from the semiconductor substrate 410 side of the SOIsubstrate until it becomes possible for the photodiode 414 to receivelight. For example, the insulation film 411 is made a stopper and it iscarried out from the rear face side of the semiconductor substrate 410by mechanical grinding, wet etching process or the like until theinsulation film 411 is exposed. Thereby, it becomes a constitution thatthe semiconductor layer 412 of the SOI substrate is left. Here, theinsulation film 412 exposed on the front face is referred to as asurface insulation film. It is shown for the drawing such that the upand down relation is opposite with respect to FIG. 47A.

As described above, the back-illuminated type CMOS solid-state imagingdevice (sensor chip) 401 a according to this exemplified embodiment isformed. Further, it is preferable to form an insulation film, forexample, by a CVD method on the rear face of the semiconductor substrate(semiconductor layer 412) which has been obtained by being thinned. Itis possible that this insulation film realizes the object of protectingthe silicon surface of the rear face and at the same time functions asan anti-reflection film with respect to the incident light.

The back-illuminated type CMOS solid-state imaging device (sensor chip)401 a formed as mentioned above is mounted on the interposer 403 by flipchip through the bumps 432 with the light receiving surface sidedirected upward. For example, the lands and the bumps on the wiring ofthe interposer 403 and the bumps on the support substrate of the sensorchip are pressure-bonded at a temperature lower than the melting pointof the wiring used in the sensor chip 401 a or the signal processingchip 402 and also at a temperature that the bumps are connectedelectrically stably. In addition, it is also possible, for example, tomount the sensor chip 401 a directly on the signal processing chip 402so as to be constituted as a module, and also in this case, theabove-described method can be employed similarly.

On the other hand, the signal processing chip 402 in which theperipheral circuit unit has been formed is also similarly mounted on theinterposer 403 by flip chip through the bumps. Thereby, theback-illuminated type CMOS solid-state imaging device (sensor chip) 401a and the signal processing chip 402 are connected through the wiringsformed on the interposer 403.

It is possible to manufacture an image sensor installing aback-illuminated type CMOS solid-state imaging device according to thisexemplified embodiment, in the manner described above. In addition, itis also possible to test the circuits of the sensor chip using theelectrode 413 for testing after carrying out the mounting by flip chip

As described above, according to the manufacturing method of theback-illuminated type CMOS solid-state imaging device of thisexemplified embodiment, the semiconductor substrate is thinned after thesupport substrate is bonded to secure the strength, and also, thepenetrating wiring is formed after the support substrate is thinned, sothat it is possible to take out the electrode from the support substratewithout taking out the electrode from the rear face of the semiconductorsubstrate and it is possible to manufacture a back-illuminated type CMOSsolid-state imaging device having a constitution that the electrode istaken out from the surface on the opposite side of the illuminationsurface conveniently and easily. Also, based on that the electrode canbe formed on the support substrate side which is the opposite side ofthe surface to which light enters, the degree of freedom of electrodearrangement rises, and it becomes possible to form a large number ofmicro bumps immediately below a pixel or immediately below the peripheryof a pixel without spoiling the aperture ratio of the CMOS image sensor.In this manner, by thinning the rear face of the semiconductor substrateand by connecting a mounting substrate such as an interposer or the likeand another semiconductor chip such as a signal processing chip or thelike in which bumps are formed by means of respective bumps, it ispossible to manufacture a device of high performance and a highfunction.

As the semiconductor substrate, for example, a substrate such as an SOIsubstrate in which an oxide film is formed in the substrate beforehandis preferable, because it is possible to use the oxide film in the SOIsubstrate as a stopper of wet etching for thinning the semiconductorsubstrate and it is possible to obtain a uniform and flat semiconductorsubstrate after the thinning process.

There is shown, in FIG. 48, a seventeenth exemplified embodiment of asemiconductor image sensor module according to the present invention.FIG. 48 is a schematic cross-section diagram showing a constitution of asemiconductor image sensor module mounting a back-illuminated type CMOSsolid-state imaging device. The semiconductor image sensor module 401according to this exemplified embodiment is formed similarly as thesixteenth exemplified embodiment, for example, by mounting a sensor chip401 b which is a back-illuminated type CMOS solid-state imaging deviceprovided with an imaging pixel unit and the signal processing chip 402provided with the peripheral circuit unit for signal processing or thelike on the interposer (intermediate substrate 403).

In the sensor chip 401 b, the interlayer insulation layer 420 is formedon the support substrate 430, and the buried wiring layers 421 areburied therein. The semiconductor layer 412 is formed for the upperlayer thereof and surface insulation films (411, 419) are formed on thefront face thereof. There are formed in the semiconductor layer 412 thephotodiode 414 and the electrode 413 for testing or the like. Also, aportion of the buried wiring layers 421 becomes a gate electrode formedwith respect to the semiconductor layer 412 through a gate insulationfilm, and thereby the MOS transistor 415 is constituted. Also, there isformed the semiconductor layer penetrating wiring 416 connected with theburied wiring layer 421 through the semiconductor layer 412.

Further, the support substrate penetrating wiring 431 passing throughthe support substrate 430 is formed, and the protrusion electrode (bump)432 projecting from the front face of the support substrate 430 isformed on the front face of the support substrate penetrating wiring431. On the other hand, for example, a semiconductor layer andinsulation layer penetrating wiring 417 connected with the supportsubstrate penetrating wiring 431 through the semiconductor layer 412 andthe interlayer insulation layer 420 is formed, and the semiconductorlayer penetrating wiring 416 and the semiconductor layer and insulationlayer penetrating wiring 417 are connected by means of a connectionwiring 418 formed on the surface insulation film 411.

The support substrate penetrating wiring 431 has a constitution in thisexemplified embodiment to be connected with the buried wiring layers 421through the semiconductor layer and insulation layer penetrating wiring417, the connection wiring 418 and the semiconductor layer penetratingwiring 416 as mentioned above, but it is not limited toy this, and itmay be such a constitution that the support substrate penetrating wiring431 is connected with the buried wiring layers 421 through a portionthereof or directly without any of them.

The sensor chip 401 b having the constitution mentioned above isconfigured such that when light is illuminated from the surfaceinsulation film (411, 419) side to the photodiode 414 formed in thesemiconductor layer 412, signal charges are generated, which are thenaccumulated in the photodiode. Then, this sensor chip 401 b is aback-illuminated type solid-state imaging device, in which there isformed a buried wiring which is connected with a plurality of pixels onone surface of the semiconductor layer in which a plurality of pixelsincluding photoelectric conversion elements and field effect transistorshave been formed, and the other surface of the semiconductor layerbecomes a light receiving surface of the photoelectric conversionelement.

The sensor chip 401 b mentioned above is mounted by flip chip on theinterposer 403 in which the wirings 440 and the insulation layer 441insulating them have been formed on the front face thereof from thesupport substrate 430 side which is the opposite side of the lightillumination side, such that the land formed by a portion of the frontface of the wiring exposed from the opening portion of the insulationlayer or the like and the bump are joined.

On the other hand, the signal processing chip 402 in which theperipheral circuit unit has been formed is mounted on the interposer byflip chip for example through bumps. The semiconductor image sensormodule 401 having such a constitution is mounted on another mountingsubstrate together with the interposer 403, and is connectedelectrically, for example, by the wire bonding 442 or the like to beused. The constitution of the image sensor (corresponding tosemiconductor image sensor module) installing a CMOS solid-state imagingdevice according to this exemplified embodiment and the constitution ofthe pixel are similar to those of the sixteenth exemplified embodiment.

The semiconductor image sensor module (that is, CMOS image sensor) 401according to the above-mentioned seventeenth exemplified embodimentachieves similar effects as the sixteenth exemplified embodiment.

It will be explained with respect to a manufacturing method of aback-illuminated type CMOS solid-state imaging device according to theseventeenth exemplified embodiment. First, as shown in FIG. 49A, forexample, the insulation film 411 which is formed by oxide silicon or thelike and which becomes a surface insulation film in the post-process isformed by a thermal oxidation method, a CVD (chemical vapor deposition)method or the like on the front face of the semiconductor substrate 410composed of silicon or the like. Further, for example, the semiconductorlayer 412 of silicon or the like is formed, for example, by a bondingmethod, an epitaxial growth method or the like in the upper layer of theinsulation film 411 to make a SOI substrate. Here, an electrode 413 fortesting is formed and prepared in the semiconductor layer 412.

Next, as shown in FIG. 49B, the photodiode 414 is formed as aphotoelectric conversion element in the semiconductor layer 412, forexample, by ion-injecting conductive impurity, and further, gateelectrodes are formed through a gate insulation film on the front faceof the semiconductor layer 412 to be connected with the photodiode 414or the like, thereby the MOS transistor 415 is formed, and thus aplurality of pixels each having the constitution mentioned above areformed. Further, for example, the interlayer insulation layer 420covering the MOS transistor is formed. At that time, it is formed whileburying the buried wiring layers 421 into the interlayer insulationlayer 420 so as to be connected with the transistor, the semiconductorlayer 412 and the like.

On the other hand, the support substrate wirings 431 becoming supportsubstrate penetrating wirings which reach at least a predetermined depthfrom the front face of one main surface of the support substrate 430composed of a silicon substrate, an insulating resin substrate or thelike are formed. Next, as shown in FIG. 49C, the support substrate 430is bonded to the upper layer of the interlayer insulation layer 420 fromthe side of the support substrate wiring 431 forming surface.

Next, as shown in FIG. 50A, the semiconductor substrate 410 is thinned,for example, from the semiconductor substrate 410 side of the SOIsubstrate until it becomes possible for the photodiode 414 to receivelight. For example, the insulation film 411 is made a stopper and it iscarried out by mechanical grinding, wet etching or the like from therear face side of the semiconductor substrate 410 until the insulationfilm 411 is exposed. Thereby, it becomes a constitution that thesemiconductor layer 412 of the SOI substrate is left. It is shown forthe drawing such that the up and down relation is made opposite withrespect to FIG. 49C.

Next, as shown in FIG. 50B, a connection wiring for connecting thesupport substrate wiring 431 and the buried wiring layer 421 is formed.Specifically, for example, the semiconductor layer penetrating wiring416 connected with the buried wiring layer 421 through the semiconductorlayer 412 is formed. The semiconductor layer and insulation layerpenetrating wiring 417 which is connected with the support substratepenetrating wiring 431 through the semiconductor layer 412 and theinterlayer insulation layer 420 is formed. The connection wiring 418 forconnecting the semiconductor layer penetrating wiring 416 and thesemiconductor layer and insulation layer penetrating wiring 417 isformed. Thereafter, the surface insulation film 419 which becomes aprotection film is formed.

Next, as shown in FIG. 51A, the support substrate 430 is thinned fromthe opposite side of the bonded surface, for example, by mechanicalgrinding or the like until the support substrate wiring 431 is exposed,and the support substrate wiring 431 is made a support substratepenetrating wiring which passes through the support substrate 430.

Next, as shown in FIG. 51B, the bumps 432 projecting from the front faceof the support substrate 430 are formed on the front face of the supportsubstrate penetrating wiring 431, for example, by a metal platingprocess or the like. In the manner described above, a back-illuminatedtype CMOS solid-state imaging device (sensor chip) 401 b according tothis exemplified embodiment is formed.

The back-illuminated type CMOS solid-state imaging device (sensor chip)401 b formed as mentioned above is mounted by flip chip on theinterposer 403 through bumps 432 by facing the light receiving surfaceside upward. The signal processing chip 402 is similarly mounted by flipchip. Then, the back-illuminated type CMOS solid-state imaging device(sensor chip) 401 b and the signal processing chip 402 are connectedthrough the wiring formed in the interposer 403. In the manner describedabove, it is possible to manufacture an image sensor installing aback-illuminated type CMOS solid-state imaging device according to thisexemplified embodiment.

In this exemplified embodiment, the buried wiring formed on thesemiconductor substrate and the penetration electrode in the supportsubstrate are not directly connected, but the penetration electrode andthe buried wiring are connected by wiring after thinning the rear faceof the semiconductor substrate. In this method, it is connected with thesignal process device by micro bumps formed on the rear face of thesupport substrate, so that it is not necessary to carry out wirebonding, and it is possible to make the size small when it is made inone chip.

As described above, according to a manufacturing method of aback-illuminated type CMOS solid-state imaging device according to thisexemplified embodiment, the semiconductor substrate is thinned aftersecuring the strength by bonding the support substrate, and also, thepenetrating wiring is formed after thinning the support substrate, sothat it is possible to conveniently and easily manufacture aback-illuminated type CMOS solid-state imaging device having aconstitution that the electrode is taken out from the surface on theopposite side of the illumination surface.

As described above, in the semiconductor image sensor module (that is,CMOS image sensor incorporating the CMOS solid-state imaging device) 401according to the seventeenth exemplified embodiment, it is possible toinput the signal outputted from the pixel to the signal process devicedirectly through micro bumps for each pixel unit or unit of a pluralityof pixels. Thereby, it is possible to provide a high functional devicethat is fast in the signal process speed between the devices and thatshows high performance and in which the image sensor and the signalprocess device are made in one chip. Also, the aperture ratio of thephotodiode is improved, the chip utilization is improved, andsimultaneous shuttering of all the pixels can be realized. Also, becauseit is not necessary to be connected with the chip or the wafer by wirebonding, it is possible to reduce the chip size, the yield of the waferrises, and it is possible to lower the chip cost.

It is possible to form the penetrating wiring in the sixteenth andseventeenth exemplified embodiments described above by Cu, Al, W, WSi,Ti, TiN, silicide or a combination thereof.

The present invention explained using FIG. 42 and FIG. 48 is not limitedby the explanation of the aforesaid sixteenth and seventeenthexemplified embodiments. For example, in the aforesaid exemplifiedembodiments, an SOI substrate is used as a semiconductor substrate, butit is not limited to this, and it is also possible to carry out thinningfrom the surface of the opposite side of the photodiode or transistorforming surface using an ordinary semiconductor substrate. Also, thebumps formed to be projected from the support substrate can be formed onthe whole chip area, and it is allowed to employ a constitution that,for example, independent bumps are formed for each pixel of the CMOSimage sensor and are connected with the interposer or the like such thatreading out becomes possible for each pixel. In addition, variouschanges are possible without departing from the scope of the presentinvention.

The semiconductor image sensor module according to each of the first toseventeenth exemplified embodiments mentioned above is applied to acamera module used, for example, in a digital still camera, a videocamera, a mobile phone with a camera or the like. Further, it is appliedto an electronic instrument module used in an electronic device or thelike.

The above-mentioned semiconductor image sensor has been configured toinclude a back-illuminated type CMOS image sensor, however, it is alsopossible otherwise to employ a constitution including afront-illuminated type CMOS image sensor of FIG. 27.

DESCRIPTION OF REFERENCE NUMERALS

1 . . . CCD image sensor, 2 . . . imaging region, 3 . . . lightreceiving sensor, 4 . . . vertical transfer register, 5 . . . horizontaltransfer register, 6 . . . output unit, 7 . . . readout gate unit, 11 .. . CMOS image sensor, 12 . . . pixel, 13 . . . imaging region, 14 . . .control unit, 15 . . . vertical drive circuit, 16 . . . column unit, 17. . . horizontal drive circuit, 18 . . . output circuit, 19 . . . columnsignal processing circuit, 20 . . . horizontal signal line

21 . . . vertical signal line, 31 . . . CMOS image sensor, 32 . . .photodiode-sensor circuit region, 33 . . . ADC-memory region, 35 . . .n-type semiconductor substrate, 36 . . . p-type semiconductor wellregion

37 . . . pixel separation region, 38 . . . unit pixel, 41 . . . colorfilter, 42 . . . on chip microlens, 43 . . . interlayer insulation film,

441, 442, 443 . . . wiring, 47 . . . p+semiconductor region,

51, 99, 100 . . . semiconductor image sensor module, 52 . . . firstsemiconductor chip including an image sensor, 53 . . . secondsemiconductor chip including an analog/digital converter array, 54 . . .third semiconductor chip including a memory element array, 55 . . .fourth semiconductor chip including an analog type nonvolatile memoryarray, 56 . . . transistor forming region, 57 . . . photodiode formingregion, 61 . . . n-type silicon substrate, 62 . . . pixel separationregion, 63 . . . p-type semiconductor well region, 64 . . . source-drainregion, 65 . . . gate insulation film, 66 . . . gate electrode, 68 a . .. n+ charge accumulation region, 68 b . . . n-type semiconductor region,69 . . . p+ semiconductor region, 71 . . . passivation film, 72 . . .color filter, 73 . . . on chip microlens, 76 . . . interlayer insulationfilm, 77 . . . multilayer wiring, 78 . . . multilayer wiring layer, 81,82 . . . pad, 83 . . . micro bump, 84 . . . penetration contact portion,84, 201 . . . contact portion, 86 . . . pixel array block, 86 a . . .pixel, 87 . . . AD converter, 88 . . . memory element sub-array, 89 . .. bits for parity check, 90 . . . redundant bits, 93 . . . senseamplifier, 94X . . . X decoder, 94Y . . . Y decoder, 101 . . . floatinggate type nonvolatile memory, 102 . . . semiconductor substrate, 103 . .. source region, 104 . . . drain region, 105 . . . floating gate, 106 .. . control gate, 111 . . . MONOS type nonvolatile memory, 112 . . .semiconductor substrate, 113 . . . source region, 114 . . . drainregion, 115 . . . tunnel oxide film, 116 . . . Si3N4 charge trap layer,117 . . . trap oxide film, 118 . . . gate polyelectrode, 121 . . . pixelarray, 122 . . . A/D converter array

123 . . . memory array, 124 . . . digital signal processing device

125 . . . control circuit, 130 . . . memory cell circuit, 131 . . .memory capacitor, 132 . . . switch for writing, 133 . . . writing dummyswitch, 134 . . . D-type flip flop for writing, 135 . . . switch forreadout, 136 . . . D-type flip flop for readout, 141 . . . p-typesemiconductor substrate, 142 . . . element separation region, 143 . . .n-type source region, 144 . . . n-type drain region, 145 . . . gateelectrode, 146 . . . p-type region, 147 . . . n-type semiconductor wellregion, 148 . . . p-type source region, 149 . . . p-type drain region,150 . . . gate electrode, 151 . . . n-type region,

153 . . . first electrode, 154 . . . dielectric film, 155 . . . secondelectrode

156 . . . interlayer insulation film, 157 . . . conductive plug, 158 . .. wiring, 161 . . . analog memory cell, 162 . . . writing control signalinput line, 163 . . . readout control signal input line, 164 . . . pixelarray block, 165 . . . A/D converter, 170 . . . wiring layer, 172 . . .silicon substrate, 173 . . . element separation region,

174, 175, 176 . . . source-drain region, 177, 178 . . . word line, 179 .. . conductive plug, 180 . . . bit line, 181 . . . sense line, 182, 183. . . resistance-changing type multivalued memory element, 184 . . .memory material, 185, 186 . . . Pt electrode

166, 167, 168, 169, 187, 188, 189, 190 . . . semiconductor image sensormodule, 193 . . . second semiconductor chip, 196 . . . firstsemiconductor chip, 197 . . . second semiconductor chip, 191, 192, 194,198, 199 . . . semiconductor image sensor module, 200, 261, 300 . . .semiconductor image sensor module, 210 . . . photodiode, 212 . . .transfer transistor, 214 . . . amplifier transistor

220 . . . reset transistor, 262 . . . semiconductor chip

263 (263A, 2636) . . . pixel, 264 . . . imaging region, 265, 266 . . .peripheral circuit, 311 . . . unit pixel, 312 . . . pixel array unit,313 . . . line or unit pixel scanning circuit, 314 . . . column or unitpixel processing unit, 315 . . . reference voltage supply unit, 316 . .. column or unit pixel scanning circuit, 317 . . . horizontal outputline, 318 . . . timing control circuit, 319 . . . chip, 356 . . .transistor forming region, 400 . . . semiconductor image sensor module,401 a, 402 b . . . sensor chip, 402 . . . signal processing chip, 403 .. . interposer, 410 . . . semiconductor substrate, 411 . . . (surface)insulation film, 412 . . . semiconductor layer, 413 . . . electrode fortesting, 414 . . . photodiode (photoelectric conversion element), 415 .. . transistor, 416 . . . semiconductor layer penetrating electrode, 417. . . semiconductor layer and insulation layer penetrating wiring, 418 .. . connection wiring, 419 . . . surface insulation film, 420 . . .interlayer insulation layer, 421 . . . buried wiring, 430 . . . supportsubstrate, 431 . . . support substrate penetrating wiring (supportsubstrate wiring), 432 . . . bump (protrusion electrode), 440 . . .wiring, 441 . . . insulation layer, 442 . . . wire bonding, 512 . . .imaging pixel unit, 514 . . . V selection means, 516 . . . H selectionmeans, 518 . . . timing generator (TG), 520 . . . S/H & CDS circuitunit, 522 . . . AGC unit, 524 . . . A/D conversion unit, 526 . . .digital amplifier unit, 600 . . . photodiode (PD), 610 . . . floatingdiffusion portion (FD portion), 620 . . . transfer transistor, 630 . . .reset transistor, 640 . . . amplifier transistor, 650 . . . addresstransistor, 660 . . . vertical signal line, 660, 670 . . . constantcurrent source

1-13. (canceled)
 14. An image sensor comprising: a first semiconductorpart including a plurality of pixels arranged in a first array,respective ones of the pixels including a photoelectric conversionelement, and a second semiconductor part including a plurality ofanalog/digital converters arranged in a second array; and a thirdsemiconductor part including a memory element array provided with atleast a decoder and a sense amplifier, wherein the first, second, andthird semiconductor parts are electrically connected to one another, andat least two of the first, second, and third semiconductor parts areelectrically connected through a penetration contact portion passingthrough at least one of the first, second, and third semiconductorparts.
 15. The image sensor according to claim 14, wherein the firstsemiconductor part, the second semiconductor part, and the thirdsemiconductor part are stacked in that order.
 16. The image sensoraccording to claim 14, wherein the first semiconductor part, the thirdsemiconductor part, and the second semiconductor part are stacked inthat order.
 17. The image sensor according to claim 14, wherein theimage sensor is a back-illuminated image sensor, a first surface of thefirst semiconductor part being opposite from a second surface of thefirst semiconductor part, and the second surface of the firstsemiconductor part being on a light-incident side of the firstsemiconductor part.
 18. The image sensor according to claim 17, whereinthe first surface of the first semiconductor part is coupled to a firstsurface of a second semiconductor part by a plurality ofelectroconductive connection bodies.
 19. The image sensor according toclaim 18, wherein the electroconductive connection bodies include firstpads formed on the first surface of the first semiconductor part, secondpads formed on the first surface of the second semiconductor part,respective ones of the first pads corresponding positionally withrespective ones of the second pads, and a bump formed betweenrespectively corresponding first pads and second pads.
 20. The imagesensor according to claim 17, wherein the first semiconductor partincludes a transistor region formed toward the first surface of thefirst semiconductor part and a photodiode region formed toward thesecond surface of the first semiconductor part, the photodiode regionincluding photodiodes corresponding to respective ones of the pluralityof pixels and the transistor region including transistors correspondingto respective ones of the photodiodes.
 21. The image sensor according toclaim 14, wherein the plurality of pixels are arranged into a pluralityof pixel array blocks, and respective ones of the plurality ofanalog/digital converters correspond to respective ones of the pluralityof pixel array blocks.
 22. The image sensor according to claim 14,wherein a first surface of the first semiconductor part is laminated toa first surface of the second semiconductor part.
 23. The image sensoraccording to claim 14, wherein a first surface of the firstsemiconductor part is bonded to a first surface of the secondsemiconductor part with an adhesive material.
 24. The image sensoraccording to claim 14, wherein the first and second semiconductor partsare arranged close to the third semiconductor part such that a pluralityof photoelectric conversion elements and a plurality of memory elementsshare one analog/digital converter.
 25. The image sensor according toclaim 24, wherein each of the memory elements is a volatile memory. 26.The image sensor according to claim 24, wherein each of the memoryelements is a floating gate nonvolatile memory.
 27. The image sensoraccording to claim 24, wherein each of the memory elements is an MONOSnonvolatile memory.
 28. The image sensor according to claim 24, whereineach of the memory elements is a multivalued nonvolatile memory.
 29. Amethod of making an image sensor module, comprising the steps of:forming a first semiconductor part, the first semiconductor partincluding a plurality of pixels arranged in a first array, respectiveones of the pixels including a photoelectric conversion element; forminga second semiconductor part, the second semiconductor part including aplurality of analog/digital converters arranged in a second array;forming a third semiconductor part, the third semiconductor partincluding a memory element array provided with at least a decoder and asense amplifier; and electrically connecting the first, second, andthird semiconductor parts to one another, wherein at least two of thefirst, second, and third semiconductor parts are electrically connectedthrough a penetration contact portion passing through at least one ofthe first, second, and third semiconductor parts.
 30. The methodaccording to claim 29, further comprising: stacking the firstsemiconductor part, the second semiconductor part, and the thirdsemiconductor part in that order.
 31. The method according to claim 29,further comprising: stacking the first semiconductor part, the thirdsemiconductor part, and the second semiconductor part in that order. 32.The method according to claim 29, further comprising: laminating thefirst semiconductor part to the second semiconductor part.
 33. Themethod according to claim 29, further comprising: bonding a firstsurface of the first semiconductor part to a first surface of the secondsemiconductor part.
 34. The method according to claim 33, furthercomprising: forming first pads on the first surface of the firstsemiconductor part and forming second pads on the first surface of thesecond semiconductor part, respective ones of the first padscorresponding positionally with respective ones of the second pads, andforming a bump between respectively corresponding first pads and secondpads
 35. The method according to claim 31, further comprising:connecting respective ones of the plurality of pixels with acorresponding one of the plurality of analog/digital converters by athrough-hole that passes through a wafer.